Dynamics of semiconductor passively mode-locked lasers: Experiment and theory

TY - GEN

T1 - Dynamics of semiconductor passively mode-locked lasers

T2 - 2013 15th International Conference on Transparent Optical Networks, ICTON 2013

AU - Javaloyes, J.

AU - Balle, S.

AU - Avrutin, E. A.

AU - Tandoi, G.

AU - Stolarz, P.

AU - Sorel, M.

AU - Ironside, C. N.

AU - Marsh, J.

PY - 2013

Y1 - 2013

N2 - This work presents an overview of a combined experimental and theoretical analysis on passive mode-locking in semiconductor quantum-well lasers based on reverse biased saturable absorbers. The experimental results describe the dynamics of laser diodes based on Aluminum quaternary materials at 1550 nm and we will also mention recent results related to GaAs Lasers at 830 nm. The experimental facts evidenced the important impact of the dispersion in frequency domain of the saturable absorption as well as the relevance of the dynamical detuning between the gain peak of the amplifying sections and the edge of absorption of the saturable absorber. Reproducing the dispersion of the saturable absorption demanded an important effort on our modeling approach, specially regarding the development of an efficient but reasonably accurate method to describe in time domain the response of the semiconductor material. The successful realization of this endeavor resulted in the development of the free software simulation package FreeTWM that allows to simulate a large class of multi-section devices. I will discuss how our modeling approach reproduces and explains the experimental results. I will conclude on a discussion of the possible improvements to FreeTWM as for instance the consideration of the ultrafast non linearities e.g. the so-called spectral hole burning and carrier heating effects.

AB - This work presents an overview of a combined experimental and theoretical analysis on passive mode-locking in semiconductor quantum-well lasers based on reverse biased saturable absorbers. The experimental results describe the dynamics of laser diodes based on Aluminum quaternary materials at 1550 nm and we will also mention recent results related to GaAs Lasers at 830 nm. The experimental facts evidenced the important impact of the dispersion in frequency domain of the saturable absorption as well as the relevance of the dynamical detuning between the gain peak of the amplifying sections and the edge of absorption of the saturable absorber. Reproducing the dispersion of the saturable absorption demanded an important effort on our modeling approach, specially regarding the development of an efficient but reasonably accurate method to describe in time domain the response of the semiconductor material. The successful realization of this endeavor resulted in the development of the free software simulation package FreeTWM that allows to simulate a large class of multi-section devices. I will discuss how our modeling approach reproduces and explains the experimental results. I will conclude on a discussion of the possible improvements to FreeTWM as for instance the consideration of the ultrafast non linearities e.g. the so-called spectral hole burning and carrier heating effects.

KW - Mode-Locked Laser

KW - Quantum Well Laser

KW - Semiconductor Laser

KW - Short Pulse Generation

UR - http://www.scopus.com/inward/record.url?scp=84885212964&partnerID=8YFLogxK

U2 - 10.1109/ICTON.2013.6602707

DO - 10.1109/ICTON.2013.6602707

M3 - Conference contribution

AN - SCOPUS:84885212964

SN - 9781479906826

BT - 2013 15th International Conference on Transparent Optical Networks, ICTON 2013

Y2 - 23 June 2013 through 27 June 2013

ER -