Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure

Bosen Zhang; Jieyao Chen; Junlin Wang; Wenjia Li; Kaiyu Tong; Guanqi Li; Jun Ma; Jing Wu; Yongbing Xu

doi:10.1142/S2010324723500297

Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure

Bosen Zhang, Jieyao Chen, Junlin Wang, Wenjia Li, Kaiyu Tong, Guanqi Li, Jun Ma, Jing Wu, Yongbing Xu

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.

Original language	English
Article number	2350029
Journal	Spin
Volume	14
Issue number	01
Early online date	31 Oct 2023
DOIs	https://doi.org/10.1142/S2010324723500297
Publication status	Published - 31 Mar 2024

Bibliographical note

This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.

Keywords

MRAM
magnetisation switching

Access to Document

10.1142/S2010324723500297

2024 SPIN Manuscript-verised_Boseng
This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.
Accepted author manuscript, 844 KBLicence: CC BY

Cite this

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title = "Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure",

abstract = "Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.",

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T1 - Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure

AU - Zhang, Bosen

AU - Chen, Jieyao

AU - Wang, Junlin

AU - Li, Wenjia

AU - Tong, Kaiyu

AU - Li, Guanqi

AU - Ma, Jun

AU - Wu, Jing

AU - Xu, Yongbing

N1 - This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.

PY - 2024/3/31

Y1 - 2024/3/31

N2 - Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.

AB - Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.

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KW - magnetisation switching

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