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From the same journal

Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: a universal analytical estimate and numerical analysis

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Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers : a universal analytical estimate and numerical analysis. / Avrutin, Eugene; Ryvkin, Boris.

In: Journal of Applied Physics, Vol. 125, No. 2, 023108 , 14.01.2019.

Research output: Contribution to journalArticlepeer-review

Harvard

Avrutin, E & Ryvkin, B 2019, 'Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: a universal analytical estimate and numerical analysis', Journal of Applied Physics, vol. 125, no. 2, 023108 . https://doi.org/10.1063/1.5055021

APA

Avrutin, E., & Ryvkin, B. (2019). Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: a universal analytical estimate and numerical analysis. Journal of Applied Physics, 125(2), [023108 ]. https://doi.org/10.1063/1.5055021

Vancouver

Avrutin E, Ryvkin B. Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: a universal analytical estimate and numerical analysis. Journal of Applied Physics. 2019 Jan 14;125(2). 023108 . https://doi.org/10.1063/1.5055021

Author

Avrutin, Eugene ; Ryvkin, Boris. / Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers : a universal analytical estimate and numerical analysis. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 2.

Bibtex - Download

@article{6a6fc248bdf54953839d99812818fa43,
title = "Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers: a universal analytical estimate and numerical analysis",
abstract = "The effect of longitudinal spatial hole burning on the performance of a semiconductor laser with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole burning on, firstly, the non-stimulated recombination in the laser (quantified as an increased effective threshold current) and, secondly, the output efficiency are calculated and compared, and the latter is shown to dominate at high currents. It is shown that the output efficiency at high pumping levels in the presence of the spatial hole burning effect can be estimated using the standard expression as the ratio of output loss to total loss, but with the internal loss enhanced by a factor greater than one and independent on the injection level. A simple universal expression for this factor for a highly asymmetric cavity, as a function of the output mirror reflectance, is obtained and compared to numerical results, with good agreement.",
author = "Eugene Avrutin and Boris Ryvkin",
note = "{\textcopyright} 2018 Author(s). This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details.",
year = "2019",
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day = "14",
doi = "10.1063/1.5055021",
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RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers

T2 - a universal analytical estimate and numerical analysis

AU - Avrutin, Eugene

AU - Ryvkin, Boris

N1 - © 2018 Author(s). This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2019/1/14

Y1 - 2019/1/14

N2 - The effect of longitudinal spatial hole burning on the performance of a semiconductor laser with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole burning on, firstly, the non-stimulated recombination in the laser (quantified as an increased effective threshold current) and, secondly, the output efficiency are calculated and compared, and the latter is shown to dominate at high currents. It is shown that the output efficiency at high pumping levels in the presence of the spatial hole burning effect can be estimated using the standard expression as the ratio of output loss to total loss, but with the internal loss enhanced by a factor greater than one and independent on the injection level. A simple universal expression for this factor for a highly asymmetric cavity, as a function of the output mirror reflectance, is obtained and compared to numerical results, with good agreement.

AB - The effect of longitudinal spatial hole burning on the performance of a semiconductor laser with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole burning on, firstly, the non-stimulated recombination in the laser (quantified as an increased effective threshold current) and, secondly, the output efficiency are calculated and compared, and the latter is shown to dominate at high currents. It is shown that the output efficiency at high pumping levels in the presence of the spatial hole burning effect can be estimated using the standard expression as the ratio of output loss to total loss, but with the internal loss enhanced by a factor greater than one and independent on the injection level. A simple universal expression for this factor for a highly asymmetric cavity, as a function of the output mirror reflectance, is obtained and compared to numerical results, with good agreement.

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U2 - 10.1063/1.5055021

DO - 10.1063/1.5055021

M3 - Article

VL - 125

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023108

ER -