Efficiency Degradation due to Carrier Build-Up in the Broadened Waveguides of High-Power Laser Diodes: Analytical Theory and Numerical Validation

Eugene A. Avrutin, Boris S. Ryvkin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An analytical theory is developed for the optical loss, output and external efficiency degradation due to the buildup of free carriers in the optical confinement layer of large-cavity laser diodes operated high above threshold. On the basis of this theory, it is shown that asymmetric, non-broadened waveguides can be a viable, and possibly superior, alternative to symmetric broadened ones in high power laser diodes from the optical losses, output efficiency, and internal quantum efficiency points of view. The foundations of the theory are validated by numerical simulations using the commercial package Lastip (TM).

Original languageEnglish
Title of host publicationNUSOD '05: Proceedings of the 5th International Conference on Numerical Simulations of Optoelectronic Devices
EditorsHJ Wunsche, J Piprek, U Bandelow, H Wenzel
Place of PublicationNEW YORK
PublisherIEEE
Pages81-82
Number of pages2
ISBN (Print)0-7803-9149-7
Publication statusPublished - 1 Sept 2005
Event5th International Conference on Numerical Simulation of Optoelectronic Devices - Berlin
Duration: 19 Sept 200522 Sept 2005

Conference

Conference5th International Conference on Numerical Simulation of Optoelectronic Devices
CityBerlin
Period19/09/0522/09/05

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