Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Zhuoyi Li; Xianyang Lu; Zhe Zhang; Wenjia Li; Taotao Li; Jian Zhou; Yu Yan; Jun Du; Ronghua Liu; Xinran Wang; Yao Li; Liang He; Jing Wu; Rong Zhang; Yongbing Xu

doi:10.1063/5.0163034

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Zhuoyi Li, Xianyang Lu, Zhe Zhang, Wenjia Li, Taotao Li, Jian Zhou, Yu Yan, Jun Du, Ronghua Liu, Xinran Wang, Yao Li, Liang He, Jing Wu, Rong Zhang, Yongbing Xu

Research output: Contribution to journal › Article › peer-review

Abstract

Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.

Original language	English
Article number	042404
Number of pages	7
Journal	Applied Physics Letters
Volume	123
DOIs	https://doi.org/10.1063/5.0163034
Publication status	Published - 24 Jul 2023

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This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.

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10.1063/5.0163034

2023 APL revised manuscript-Final
This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.
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Cite this

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title = "Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer",

abstract = "Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.",

author = "Zhuoyi Li and Xianyang Lu and Zhe Zhang and Wenjia Li and Taotao Li and Jian Zhou and Yu Yan and Jun Du and Ronghua Liu and Xinran Wang and Yao Li and Liang He and Jing Wu and Rong Zhang and Yongbing Xu",

note = "This is an author-produced version of the published paper. Uploaded in accordance with the University{\textquoteright}s Research Publications and Open Access policy.",

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day = "24",

doi = "10.1063/5.0163034",

language = "English",

volume = "123",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

AU - Li, Zhuoyi

AU - Lu, Xianyang

AU - Zhang, Zhe

AU - Li, Wenjia

AU - Li, Taotao

AU - Zhou, Jian

AU - Yan, Yu

AU - Du, Jun

AU - Liu, Ronghua

AU - Wang, Xinran

AU - Li, Yao

AU - He, Liang

AU - Wu, Jing

AU - Zhang, Rong

AU - Xu, Yongbing

N1 - This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.

PY - 2023/7/24

Y1 - 2023/7/24

N2 - Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.

AB - Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.

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DO - 10.1063/5.0163034

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