Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Evan Dimech; John Frederick Dawson

doi:10.1109/IECON.2018.8591088

Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Evan Dimech, John Frederick Dawson

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

Original language	English
Title of host publication	IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
Pages	5924-5929
Number of pages	6
DOIs	https://doi.org/10.1109/IECON.2018.8591088
Publication status	Published - 21 Oct 2018
Event	IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society - Washington DC, United States Duration: 21 Oct 2018 → 23 Oct 2018 http://www.iecon2018.org/index.html

Conference

Conference	IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
Abbreviated title	IECON 2018
Country/Territory	United States
City	Washington DC
Period	21/10/18 → 23/10/18
Internet address	http://www.iecon2018.org/index.html

Bibliographical note

Accepted 18 July 2018

Keywords

Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization

Access to Document

10.1109/IECON.2018.8591088

IEEE IECON 2018 - Evan Dimech John Dawson Postprint
IEEE Conference
Accepted author manuscript, 915 KBLicence: Other

1 Finished

EMS: Electromagnetic Monitoring of Semiconductor Ageing
Dawson, J. F., Flintoft, I. D. & Dimech, E.
1/10/14 → 1/10/20
Project: Other project › Miscellaneous project

Cite this

@inproceedings{5928a4f8816d48c9a19d3ba97009159c,

title = "Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress",

abstract = "During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed",

keywords = "Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization",

author = "Evan Dimech and Dawson, {John Frederick}",

note = "Accepted 18 July 2018; IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, IECON 2018 ; Conference date: 21-10-2018 Through 23-10-2018",

year = "2018",

month = oct,

day = "21",

doi = "10.1109/IECON.2018.8591088",

language = "English",

pages = "5924--5929",

booktitle = "IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society",

url = "http://www.iecon2018.org/index.html",

}

Dimech, E & Dawson, JF 2018, Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. in IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. pp. 5924-5929, IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, Washington DC, United States, 21/10/18. https://doi.org/10.1109/IECON.2018.8591088

TY - GEN

T1 - Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

AU - Dimech, Evan

AU - Dawson, John Frederick

N1 - Accepted 18 July 2018

PY - 2018/10/21

Y1 - 2018/10/21

N2 - During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

AB - During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

KW - Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization

U2 - 10.1109/IECON.2018.8591088

DO - 10.1109/IECON.2018.8591088

M3 - Conference contribution

SP - 5924

EP - 5929

BT - IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society

T2 - IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society

Y2 - 21 October 2018 through 23 October 2018

ER -

Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Abstract

Conference

Bibliographical note

Keywords

Access to Document

Projects

EMS: Electromagnetic Monitoring of Semiconductor Ageing

Cite this