By the same authors

Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

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Title of host publicationIECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
DateAccepted/In press - 18 Jul 2018
DatePublished (current) - 21 Oct 2018
Pages5924-5929
Number of pages6
Original languageEnglish

Abstract

During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

Bibliographical note

Accepted 18 July 2018

    Research areas

  • Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization

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