By the same authors

Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Standard

Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. / Dimech, Evan; Dawson, John Frederick.

IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. 2018. p. 5924-5929.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harvard

Dimech, E & Dawson, JF 2018, Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. in IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. pp. 5924-5929, IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, Washington DC, United States, 21/10/18. https://doi.org/10.1109/IECON.2018.8591088

APA

Dimech, E., & Dawson, J. F. (2018). Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. In IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society (pp. 5924-5929) https://doi.org/10.1109/IECON.2018.8591088

Vancouver

Dimech E, Dawson JF. Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. In IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. 2018. p. 5924-5929 https://doi.org/10.1109/IECON.2018.8591088

Author

Dimech, Evan ; Dawson, John Frederick. / Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress. IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. 2018. pp. 5924-5929

Bibtex - Download

@inproceedings{5928a4f8816d48c9a19d3ba97009159c,
title = "Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress",
abstract = "During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed",
keywords = "Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization",
author = "Evan Dimech and Dawson, {John Frederick}",
note = "Accepted 18 July 2018; IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, IECON 2018 ; Conference date: 21-10-2018 Through 23-10-2018",
year = "2018",
month = oct,
day = "21",
doi = "10.1109/IECON.2018.8591088",
language = "English",
pages = "5924--5929",
booktitle = "IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society",
url = "http://www.iecon2018.org/index.html",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Electrical Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

AU - Dimech, Evan

AU - Dawson, John Frederick

N1 - Accepted 18 July 2018

PY - 2018/10/21

Y1 - 2018/10/21

N2 - During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

AB - During their lifetime, power semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs) can suffer from different failure mechanisms. This paper reports the monitored changes in the electrical parameters of tested IGBTs when subjected to accelerated ageing through thermo-electrical overstress. The changes are indicative that the device is at the onset of failure and hence can be utilized within prognostic techniques so as to determine the health state of the device. The study describes how the accelerated ageing strategy was implemented providing details of the implemented hardware and software. Tested IGBTs were characterized before, during and after accelerated ageing. Details of the IGBT characterization setup are provided. Furthermore, the corresponding monitored changes in the die-attach X-Ray imagery, gate threshold voltage, collector leakage current, transfer characteristics, transconductance, output characteristics and internal free-wheeling diode forward characteristics are presented and discussed

KW - Fault detection, diagnostics and prognostics,insulated gate bipolar transistors, accelerated ageing, electrical parameters characterization

U2 - 10.1109/IECON.2018.8591088

DO - 10.1109/IECON.2018.8591088

M3 - Conference contribution

SP - 5924

EP - 5929

BT - IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society

T2 - IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society

Y2 - 21 October 2018 through 23 October 2018

ER -