Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications

Firman Mangasa Simanjuntak, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov, Themistoklis Prodromakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.

Original languageEnglish
Title of host publicationIES 2022 - 2022 International Electronics Symposium
Subtitle of host publicationEnergy Development for Climate Change Solution and Clean Energy Transition, Proceeding
EditorsAndhik Ampuh Yunanto, Yanuar Risah Prayogi, Putu Agus Mahadi Putra, Hendhi Hermawan, Nailussa'ada Nailussa'ada, Maretha Ruswiansari, Mohamad Ridwan, Farida Gamar, Afifah Dwi Ramadhani, Weny Mistarika Rahmawati, Muhammad Rizani Rusli
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781665489713
Publication statusPublished - 19 Sept 2022
Event24th International Electronics Symposium, IES 2022 - Surabaya, Indonesia
Duration: 9 Aug 202211 Aug 2022

Publication series

NameIES 2022 - 2022 International Electronics Symposium: Energy Development for Climate Change Solution and Clean Energy Transition, Proceeding


Conference24th International Electronics Symposium, IES 2022

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work is supported by MSCA EC Grant Agreement Number 101029535– MENESIS, FORTE, and RAEng CiET.

Publisher Copyright:
© 2022 IEEE.


  • data storage
  • memristor
  • random number generator
  • resistive memory
  • semiconductor fabrication
  • synaptic
  • WORM

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