Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications

TY - GEN

T1 - Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications

AU - Simanjuntak, Firman Mangasa

AU - Talbi, Fayzah

AU - Kerrigan, Adam

AU - Lazarov, Vlado K.

AU - Prodromakis, Themistoklis

N1 - Funding Information: ACKNOWLEDGMENT This work is supported by MSCA EC Grant Agreement Number 101029535– MENESIS, FORTE, and RAEng CiET. Publisher Copyright: © 2022 IEEE.

PY - 2022/9/19

Y1 - 2022/9/19

N2 - We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.

AB - We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.

KW - data storage

KW - memristor

KW - random number generator

KW - resistive memory

KW - semiconductor fabrication

KW - synaptic

KW - WORM

UR - http://www.scopus.com/inward/record.url?scp=85139711397&partnerID=8YFLogxK

U2 - 10.1109/IES55876.2022.9888713

DO - 10.1109/IES55876.2022.9888713

M3 - Conference contribution

AN - SCOPUS:85139711397

T3 - IES 2022 - 2022 International Electronics Symposium: Energy Development for Climate Change Solution and Clean Energy Transition, Proceeding

SP - 171

EP - 175

BT - IES 2022 - 2022 International Electronics Symposium

A2 - Yunanto, Andhik Ampuh

A2 - Prayogi, Yanuar Risah

A2 - Putra, Putu Agus Mahadi

A2 - Hermawan, Hendhi

A2 - Nailussa'ada, Nailussa'ada

A2 - Ruswiansari, Maretha

A2 - Ridwan, Mohamad

A2 - Gamar, Farida

A2 - Ramadhani, Afifah Dwi

A2 - Rahmawati, Weny Mistarika

A2 - Rusli, Muhammad Rizani

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Electronics Symposium, IES 2022

Y2 - 9 August 2022 through 11 August 2022

ER -