Electron transport and photoemission studies of amorphous CaAl thin films

Research output: Contribution to journalArticle

Author(s)

  • Simon A. Morton
  • D. Greig
  • C. G H Walker
  • F. Mayeya
  • M. A. Howson
  • J. A D Matthew
  • D. Norman

Department/unit(s)

Publication details

JournalMaterials Research Society Symposium Proceedings
DatePublished - 1 Jan 1995
Volume375
Number of pages6
Pages (from-to)45-50
Original languageEnglish

Abstract

Photoemission and electron transport measurements were carried out on amorphous CaAl and CaMg thin films to ascertain whether the presence of d-states explains the high resistivity of CaAl. In the experiment, in-situ measurement of electrical resistivity was done using a four-point prove capable of checking amorphicity, while examination of Ca 3p-3d photoemission resonance was carried out using a tunable synchroton radiation. Results showed the shoulder development of Fermi edge at higher concentration of Al in CaAl, a feature not observed in CaMg alloy. The revelation of d-states in both alloys suggested that the high resistivity of CaAl can be explained by the presence of d-states alone.

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