Abstract
We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-A1 Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.
Original language | English |
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Pages (from-to) | 262-265 |
Number of pages | 3 |
Journal | Materials Science and Engineering (B) |
Volume | 14 |
Issue number | 3 |
DOIs | |
Publication status | Published - 15 Aug 1992 |