Electronic excitation energies in Schottky barriers

R.W. Godby; J.P.A. Charlesworth; R.J. Needs; L.J. Sham

doi:10.1016/0921-5107(92)90308-V

Electronic excitation energies in Schottky barriers

R.W. Godby, J.P.A. Charlesworth, R.J. Needs, L.J. Sham

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-A1 Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.

Original language	English
Pages (from-to)	262-265
Number of pages	3
Journal	Materials Science and Engineering (B)
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/0921-5107(92)90308-V
Publication status	Published - 15 Aug 1992

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10.1016/0921-5107(92)90308-V

Cite this

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title = "Electronic excitation energies in Schottky barriers",

abstract = "We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-A1 Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.",

author = "R.W. Godby and J.P.A. Charlesworth and R.J. Needs and L.J. Sham",

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T1 - Electronic excitation energies in Schottky barriers

AU - Godby, R.W.

AU - Charlesworth, J.P.A.

AU - Needs, R.J.

AU - Sham, L.J.

PY - 1992/8/15

Y1 - 1992/8/15

N2 - We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-A1 Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.

AB - We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-A1 Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.

U2 - 10.1016/0921-5107(92)90308-V

DO - 10.1016/0921-5107(92)90308-V

M3 - Article

SN - 0921-5107

VL - 14

SP - 262

EP - 265

JO - Materials Science and Engineering (B)

JF - Materials Science and Engineering (B)

IS - 3

ER -