Energy-level alignment at the Alq 3/Fe 3O 4(001) interface

A. Pratt; L. Dunne; X. Sun; M. Kurahashi; Y. Yamauchi

doi:10.1063/1.3677768

Energy-level alignment at the Alq ₃/Fe ₃O ₄(001) interface

A. Pratt^*, L. Dunne, X. Sun, M. Kurahashi, Y. Yamauchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have used the technique of metastable de-excitation spectroscopy to probe the interfacial electronic structure of the organic semiconductor (OSC) Alq₃ deposited onto clean Fe₃O₄(001) substrates. We have measured shifts in the low-energy secondary electron cutoff and energetic onset of the highest occupied molecular orbital (HOMO) of Alq₃ as the coverage increases from the sub-ML range to multilayer formation. We find that the presence of an interfacial dipole induces a uniform decrease in the valence band electronic states by 1.2 eV with respect to the vacuum level and modifies the position of the HOMO energetic onset to 1.8 eV below the substrate Fermi level. The strong intrinsic dipole moment of Alq₃ is suggested as the origin for these changes in accordance with previous studies of Alq₃ deposited onto various substrates.

Original language	English
Article number	07C114
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3677768
Publication status	Published - 1 Apr 2012

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abstract = "We have used the technique of metastable de-excitation spectroscopy to probe the interfacial electronic structure of the organic semiconductor (OSC) Alq3 deposited onto clean Fe3O4(001) substrates. We have measured shifts in the low-energy secondary electron cutoff and energetic onset of the highest occupied molecular orbital (HOMO) of Alq3 as the coverage increases from the sub-ML range to multilayer formation. We find that the presence of an interfacial dipole induces a uniform decrease in the valence band electronic states by 1.2 eV with respect to the vacuum level and modifies the position of the HOMO energetic onset to 1.8 eV below the substrate Fermi level. The strong intrinsic dipole moment of Alq3 is suggested as the origin for these changes in accordance with previous studies of Alq3 deposited onto various substrates.",

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T1 - Energy-level alignment at the Alq 3/Fe 3O 4(001) interface

AU - Pratt, A.

AU - Dunne, L.

AU - Sun, X.

AU - Kurahashi, M.

AU - Yamauchi, Y.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - We have used the technique of metastable de-excitation spectroscopy to probe the interfacial electronic structure of the organic semiconductor (OSC) Alq3 deposited onto clean Fe3O4(001) substrates. We have measured shifts in the low-energy secondary electron cutoff and energetic onset of the highest occupied molecular orbital (HOMO) of Alq3 as the coverage increases from the sub-ML range to multilayer formation. We find that the presence of an interfacial dipole induces a uniform decrease in the valence band electronic states by 1.2 eV with respect to the vacuum level and modifies the position of the HOMO energetic onset to 1.8 eV below the substrate Fermi level. The strong intrinsic dipole moment of Alq3 is suggested as the origin for these changes in accordance with previous studies of Alq3 deposited onto various substrates.

AB - We have used the technique of metastable de-excitation spectroscopy to probe the interfacial electronic structure of the organic semiconductor (OSC) Alq3 deposited onto clean Fe3O4(001) substrates. We have measured shifts in the low-energy secondary electron cutoff and energetic onset of the highest occupied molecular orbital (HOMO) of Alq3 as the coverage increases from the sub-ML range to multilayer formation. We find that the presence of an interfacial dipole induces a uniform decrease in the valence band electronic states by 1.2 eV with respect to the vacuum level and modifies the position of the HOMO energetic onset to 1.8 eV below the substrate Fermi level. The strong intrinsic dipole moment of Alq3 is suggested as the origin for these changes in accordance with previous studies of Alq3 deposited onto various substrates.

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Energy-level alignment at the Alq 3/Fe 3O 4(001) interface

Abstract

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Energy-level alignment at the Alq ₃/Fe ₃O ₄(001) interface