Epitaxial growth and magnetic properties of half-metallic Fe3O4 on GaAs(100)

Y X Lu, J S Claydon, Y B Xu, S M Thompson, Karen Wilson, G van der Laan

Research output: Contribution to journalArticlepeer-review

Abstract

The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500 K in an oxygen partial pressure of 5x10(-5) mbar. The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fe-td(3+), Fe-oh(2+), and Fe-oh(3+). The epitaxial relationship was found to be Fe3O4(100)<011>//GaAs(100)<010> with the unit cell of Fe3O4 rotated by 45degrees to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0-6.0 nm with the easy axes along the [0 (1) over bar1] direction of the GaAs(100) substrate.

Original languageEnglish
Article number233304
Pages (from-to)-
Number of pages4
JournalPhysical Review B
Volume70
Issue number23
DOIs
Publication statusPublished - Dec 2004

Bibliographical note

© 2001 The American Physical Society. Available from the author's web site (Associated URL field).

Keywords

  • ELECTRICAL SPIN INJECTION
  • MOLECULAR-BEAM EPITAXY
  • THIN-FILMS
  • SEMICONDUCTOR
  • ANISOTROPY
  • (GA,MN)AS
  • BEHAVIOR
  • SURFACE
  • OXIDES
  • XPS

Cite this