Epitaxial Growth and Magnetic Properties of Half-Metallic Fe3O4 on Si(100) Using MgO Buffer Layer

Sameh S. A. Hassan, Yongbing Xu, Jing Wu, Sarah M. Thompson

Research output: Contribution to journalArticlepeer-review

Abstract

The growth and magnetic properties of epitaxial magnetite Fe3O4 on Si(100) using MgO buffer layer have been studied by reflection high-energy electron diffraction, X-ray photoelectron spectroscopy, and magneto-optical Kerr effect. The epitaxial Fe3O4 films were prepared by in situ post growth annealing of ultrathin epitaxial Fe films at 220 degrees C in an oxygen partial pressure of 8 x 10(-4) mbar. The epitaxial relationship was found to be Fe3O4(100)< 001 >//MgO(100)< 001 >//Si(100)< 001 > with the MgO film grown cube-on-cube orientation with the Si substrate. While the Fe unit cell rotates 45 degrees to match that of the MgO buffer layer, it rotates 45 degrees back upon oxidation. A low saturation field has been observed indicating low density of antiphase boundaries.

Original languageEnglish
Article number5257365
Pages (from-to)4357-4359
Number of pages3
JournalIEEE Transactions on Magnetics
Volume45
Issue number10
DOIs
Publication statusPublished - Oct 2009

Keywords

  • Magnetic oxides
  • magnetite
  • molecular beam epitaxy
  • Si
  • spin injection
  • spintronics
  • ultra-thin films
  • PULSED-LASER DEPOSITION
  • SPIN INJECTION
  • ELECTRONIC MEASUREMENT
  • FILMS
  • TRANSPORT
  • SILICON
  • SI(001)
  • PLD

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