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Epitaxial Growth and Magnetic Properties of Half-Metallic Fe3O4 on Si(100) Using MgO Buffer Layer

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Publication details

JournalIEEE Transactions on Magnetics
DatePublished - Oct 2009
Issue number10
Number of pages3
Pages (from-to)4357-4359
Original languageEnglish


The growth and magnetic properties of epitaxial magnetite Fe3O4 on Si(100) using MgO buffer layer have been studied by reflection high-energy electron diffraction, X-ray photoelectron spectroscopy, and magneto-optical Kerr effect. The epitaxial Fe3O4 films were prepared by in situ post growth annealing of ultrathin epitaxial Fe films at 220 degrees C in an oxygen partial pressure of 8 x 10(-4) mbar. The epitaxial relationship was found to be Fe3O4(100)< 001 >//MgO(100)< 001 >//Si(100)< 001 > with the MgO film grown cube-on-cube orientation with the Si substrate. While the Fe unit cell rotates 45 degrees to match that of the MgO buffer layer, it rotates 45 degrees back upon oxidation. A low saturation field has been observed indicating low density of antiphase boundaries.

    Research areas

  • Magnetic oxides, magnetite, molecular beam epitaxy, Si, spin injection, spintronics, ultra-thin films, PULSED-LASER DEPOSITION, SPIN INJECTION, ELECTRONIC MEASUREMENT, FILMS, TRANSPORT, SILICON, SI(001), PLD

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