Evidence for electrical spin tunnel injection into silicon

C.L. Dennis; J.F. Gregg; G.J. Ensell; S.M. Thompson

doi:10.1063/1.2229870

Evidence for electrical spin tunnel injection into silicon

C.L. Dennis, J.F. Gregg, G.J. Ensell, S.M. Thompson

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si. (c) 2006 American Institute of Physics.

Original language	English
Article number	043717
Pages (from-to)	-
Number of pages	4
Journal	Journal of Applied Physics
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.2229870
Publication status	Published - 15 Aug 2006

Keywords

HETEROSTRUCTURE
SEMICONDUCTOR
TRANSISTOR
RELAXATION
BARRIER
FILMS
METAL

Access to Document

10.1063/1.2229870

http://dx.doi.org/10.1063/1.2229870

Cite this

@article{216335d018e645c5b4555f5bfde4968e,

title = "Evidence for electrical spin tunnel injection into silicon",

abstract = "Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si. (c) 2006 American Institute of Physics.",

keywords = "HETEROSTRUCTURE, SEMICONDUCTOR, TRANSISTOR, RELAXATION, BARRIER, FILMS, METAL",

author = "C.L. Dennis and J.F. Gregg and G.J. Ensell and S.M. Thompson",

year = "2006",

month = aug,

day = "15",

doi = "10.1063/1.2229870",

language = "English",

volume = "100",

pages = "--",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Evidence for electrical spin tunnel injection into silicon

AU - Dennis, C.L.

AU - Gregg, J.F.

AU - Ensell, G.J.

AU - Thompson, S.M.

PY - 2006/8/15

Y1 - 2006/8/15

N2 - Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si. (c) 2006 American Institute of Physics.

AB - Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si. (c) 2006 American Institute of Physics.

KW - HETEROSTRUCTURE

KW - SEMICONDUCTOR

KW - TRANSISTOR

KW - RELAXATION

KW - BARRIER

KW - FILMS

KW - METAL

U2 - 10.1063/1.2229870

DO - 10.1063/1.2229870

M3 - Article

SN - 0021-8979

VL - 100

SP - -

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043717

ER -