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Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics

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Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics. / Williams, Rhys; Ramasse, Quentin M; McKenna, Keith P; Phillips, Laurie J; Yates, Peter; Hutter, Oliver; Durose, Ken; Major, Jonathan D; Mendis, Budhika G.

In: ACS applied materials & interfaces, 21.04.2020.

Research output: Contribution to journalArticlepeer-review

Harvard

Williams, R, Ramasse, QM, McKenna, KP, Phillips, LJ, Yates, P, Hutter, O, Durose, K, Major, JD & Mendis, BG 2020, 'Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics', ACS applied materials & interfaces. https://doi.org/10.1021/acsami.0c03690

APA

Williams, R., Ramasse, Q. M., McKenna, K. P., Phillips, L. J., Yates, P., Hutter, O., Durose, K., Major, J. D., & Mendis, B. G. (2020). Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.0c03690

Vancouver

Williams R, Ramasse QM, McKenna KP, Phillips LJ, Yates P, Hutter O et al. Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics. ACS applied materials & interfaces. 2020 Apr 21. https://doi.org/10.1021/acsami.0c03690

Author

Williams, Rhys ; Ramasse, Quentin M ; McKenna, Keith P ; Phillips, Laurie J ; Yates, Peter ; Hutter, Oliver ; Durose, Ken ; Major, Jonathan D ; Mendis, Budhika G. / Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics. In: ACS applied materials & interfaces. 2020.

Bibtex - Download

@article{13673c7a5db948318d1f89fcfad314a4,
title = "Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics",
abstract = "The crystal structure of Sb2Se3 gives rise to unique properties that cannot otherwise be achieved with conventional thin-film photovoltaic materials, such as CdTe or Cu(In,Ga)Se2. It has previously been asserted that, grain boundaries can be made benign provided only the weak van der Waals forces between the (Sb4Se6)n ribbons are disrupted. Here it is shown that non-radiative recombination is suppressed even for grain boundaries cutting across the (Sb4Se6)n ribbons. This is due to a remarkable self-healing process whereby atoms at the grain boundary can relax to remove any electronic defect states within the band gap. Grain boundaries can however impede charge transport due to the fact that carriers have a higher mobility along the (Sb4Se6)n ribbons. Because of the ribbon misorientation certain grain boundaries can effectively block charge collection. Furthermore, it is shown that CdS is not a suitable emitter to partner Sb2Se3 due to Sb and Se inter-diffusion. As a result a highly defective Sb2Se3 interfacial layer is formed that potentially reduces device efficiency through interface recombination.",
author = "Rhys Williams and Ramasse, {Quentin M} and McKenna, {Keith P} and Phillips, {Laurie J} and Peter Yates and Oliver Hutter and Ken Durose and Major, {Jonathan D} and Mendis, {Budhika G}",
note = "{\textcopyright} 2020 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details.",
year = "2020",
month = apr,
day = "21",
doi = "10.1021/acsami.0c03690",
language = "English",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Evidence for self-healing benign grain boundaries and a highly defective Sb2Se3-CdS interfacial layer in Sb2Se3 thin-film photovoltaics

AU - Williams, Rhys

AU - Ramasse, Quentin M

AU - McKenna, Keith P

AU - Phillips, Laurie J

AU - Yates, Peter

AU - Hutter, Oliver

AU - Durose, Ken

AU - Major, Jonathan D

AU - Mendis, Budhika G

N1 - © 2020 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2020/4/21

Y1 - 2020/4/21

N2 - The crystal structure of Sb2Se3 gives rise to unique properties that cannot otherwise be achieved with conventional thin-film photovoltaic materials, such as CdTe or Cu(In,Ga)Se2. It has previously been asserted that, grain boundaries can be made benign provided only the weak van der Waals forces between the (Sb4Se6)n ribbons are disrupted. Here it is shown that non-radiative recombination is suppressed even for grain boundaries cutting across the (Sb4Se6)n ribbons. This is due to a remarkable self-healing process whereby atoms at the grain boundary can relax to remove any electronic defect states within the band gap. Grain boundaries can however impede charge transport due to the fact that carriers have a higher mobility along the (Sb4Se6)n ribbons. Because of the ribbon misorientation certain grain boundaries can effectively block charge collection. Furthermore, it is shown that CdS is not a suitable emitter to partner Sb2Se3 due to Sb and Se inter-diffusion. As a result a highly defective Sb2Se3 interfacial layer is formed that potentially reduces device efficiency through interface recombination.

AB - The crystal structure of Sb2Se3 gives rise to unique properties that cannot otherwise be achieved with conventional thin-film photovoltaic materials, such as CdTe or Cu(In,Ga)Se2. It has previously been asserted that, grain boundaries can be made benign provided only the weak van der Waals forces between the (Sb4Se6)n ribbons are disrupted. Here it is shown that non-radiative recombination is suppressed even for grain boundaries cutting across the (Sb4Se6)n ribbons. This is due to a remarkable self-healing process whereby atoms at the grain boundary can relax to remove any electronic defect states within the band gap. Grain boundaries can however impede charge transport due to the fact that carriers have a higher mobility along the (Sb4Se6)n ribbons. Because of the ribbon misorientation certain grain boundaries can effectively block charge collection. Furthermore, it is shown that CdS is not a suitable emitter to partner Sb2Se3 due to Sb and Se inter-diffusion. As a result a highly defective Sb2Se3 interfacial layer is formed that potentially reduces device efficiency through interface recombination.

U2 - 10.1021/acsami.0c03690

DO - 10.1021/acsami.0c03690

M3 - Article

C2 - 32314567

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

ER -