Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling

K. Sankaran; J. Swerts; R. Carpenter; S. Couet; K. Garello; R. F.L. Evans; S. Rao; W. Kim; S. Kundu; D. Crotti; G. S. Kar; G. Pourtois

doi:10.1109/IEDM.2018.8614627

Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling

K. Sankaran, J. Swerts, R. Carpenter, S. Couet, K. Garello, R. F.L. Evans, S. Rao, W. Kim, S. Kundu, D. Crotti, G. S. Kar, G. Pourtois

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	IEEE
Pages	40.5.1-40.5.4
Number of pages	4
Volume	2018-December
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614627
Publication status	Published - 16 Jan 2019
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

Bibliographical note

This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

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10.1109/IEDM.2018.8614627

IEDM2018
This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.
Accepted author manuscript, 3.43 MBLicence: Unspecified

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Sankaran, K., Swerts, J., Carpenter, R., Couet, S., Garello, K., Evans, R. F. L., Rao, S., Kim, W., Kundu, S., Crotti, D., Kar, G. S., & Pourtois, G. (2019). Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (Vol. 2018-December, pp. 40.5.1-40.5.4). Article 8614627 IEEE. https://doi.org/10.1109/IEDM.2018.8614627

@inproceedings{a688c4eae8f644caab636afe7980daac,

title = "Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling",

abstract = "For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance.",

author = "K. Sankaran and J. Swerts and R. Carpenter and S. Couet and K. Garello and Evans, {R. F.L.} and S. Rao and W. Kim and S. Kundu and D. Crotti and Kar, {G. S.} and G. Pourtois",

note = "This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details. ; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2019",

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day = "16",

doi = "10.1109/IEDM.2018.8614627",

language = "English",

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publisher = "IEEE",

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Sankaran, K, Swerts, J, Carpenter, R, Couet, S, Garello, K, Evans, RFL, Rao, S, Kim, W, Kundu, S, Crotti, D, Kar, GS & Pourtois, G 2019, Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling. in 2018 IEEE International Electron Devices Meeting, IEDM 2018. vol. 2018-December, 8614627, IEEE, pp. 40.5.1-40.5.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614627

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T1 - Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling

AU - Sankaran, K.

AU - Swerts, J.

AU - Carpenter, R.

AU - Couet, S.

AU - Garello, K.

AU - Evans, R. F.L.

AU - Rao, S.

AU - Kim, W.

AU - Kundu, S.

AU - Crotti, D.

AU - Kar, G. S.

AU - Pourtois, G.

N1 - This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2019/1/16

Y1 - 2019/1/16

N2 - For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance.

AB - For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance.

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AN - SCOPUS:85061770748

VL - 2018-December

SP - 40.5.1-40.5.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - IEEE

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling

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