Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya; Takahide Kubota; Tomoko Sugiyama; Teodor Huminiuc; Atsufumi Hirohata; Koki Takanashi

doi:10.1088/0022-3727/49/23/235001

Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya, Takahide Kubota, Tomoko Sugiyama, Teodor Huminiuc, Atsufumi Hirohata, Koki Takanashi

Research output: Contribution to journal › Article › peer-review

Abstract

Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal
substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field Hex was 55 Oe corresponding to the exchange coupling energy Jk of 0.03 erg cm−2.

Original language	English
Article number	235001
Number of pages	5
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	23
DOIs	https://doi.org/10.1088/0022-3727/49/23/235001
Publication status	Published - 12 May 2016

Bibliographical note

© 2016, IOP Publishing Ltd . This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

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10.1088/0022-3727/49/23/235001

_v3.0_J_Phys_D_Tsuchiya
© 2016, IOP Publishing Ltd . This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
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Cite this

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abstract = "Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystalsubstrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the N{\'e}el temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field Hex was 55 Oe corresponding to the exchange coupling energy Jk of 0.03 erg cm−2.",

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AU - Huminiuc, Teodor

AU - Hirohata, Atsufumi

AU - Takanashi, Koki

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N2 - Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystalsubstrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field Hex was 55 Oe corresponding to the exchange coupling energy Jk of 0.03 erg cm−2.

AB - Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystalsubstrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field Hex was 55 Oe corresponding to the exchange coupling energy Jk of 0.03 erg cm−2.

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Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

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Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

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HARFIR Heusler Alloy Replacement for Iridium

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