Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya, Takahide Kubota, Tomoko Sugiyama, Teodor Huminiuc, Atsufumi Hirohata, Koki Takanashi

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Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal
substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field Hex was 55 Oe corresponding to the exchange coupling energy Jk of 0.03 erg cm−2.
Original languageEnglish
Article number235001
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number23
Publication statusPublished - 12 May 2016

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