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Experimental and density functional study of Mn doped Bi2Te3 topological insulator

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JournalMaterials
DateAccepted/In press - 15 Nov 2016
DatePublished (current) - 1 Dec 2016
Issue number12
Volume4
Number of pages1
Pages (from-to)126103
Original languageEnglish

Abstract

We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure show that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and
Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS show that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

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© Author(s) 2016. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

    Research areas

  • DFT, density functional theory, topological insulators

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