Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

Kazuma Kunimatsu, Tomoki Tsuchiya, Kelvin Elphick, Tomohiro Ichinose, Kazuya Suzuki, Atsufumi Hirohata, Shigemi Mizukami

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We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu/cm3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350◦C, indicating that bcc Co3Mn alloys have relatively high spin polarization.
Original languageEnglish
Article number080908
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number8
Publication statusPublished - 23 Jul 2019

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