Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

Kazuma Kunimatsu; Tomoki Tsuchiya; Kelvin Elphick; Tomohiro Ichinose; Kazuya Suzuki; Atsufumi Hirohata; Shigemi Mizukami

doi:10.7567/1347-4065/ab2f96

Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

Kazuma Kunimatsu, Tomoki Tsuchiya, Kelvin Elphick, Tomohiro Ichinose, Kazuya Suzuki, Atsufumi Hirohata, Shigemi Mizukami

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu/cm3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350◦C, indicating that bcc Co3Mn alloys have relatively high spin polarization.

Original language	English
Article number	080908
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	58
Issue number	8
DOIs	https://doi.org/10.7567/1347-4065/ab2f96
Publication status	Published - 23 Jul 2019

Bibliographical note

©2019 The Japan Society of Applied Physics. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

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10.7567/1347-4065/ab2f96

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Cite this

@article{e25d321aa72a4d4199c63cbaf58ef954,

title = "Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode",

abstract = "We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu/cm3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350◦C, indicating that bcc Co3Mn alloys have relatively high spin polarization.",

author = "Kazuma Kunimatsu and Tomoki Tsuchiya and Kelvin Elphick and Tomohiro Ichinose and Kazuya Suzuki and Atsufumi Hirohata and Shigemi Mizukami",

note = "{\textcopyright}2019 The Japan Society of Applied Physics. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details. ",

year = "2019",

month = jul,

day = "23",

doi = "10.7567/1347-4065/ab2f96",

language = "English",

volume = "58",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

AU - Kunimatsu, Kazuma

AU - Tsuchiya, Tomoki

AU - Elphick, Kelvin

AU - Ichinose, Tomohiro

AU - Suzuki, Kazuya

AU - Hirohata, Atsufumi

AU - Mizukami, Shigemi

N1 - ©2019 The Japan Society of Applied Physics. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2019/7/23

Y1 - 2019/7/23

N2 - We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu/cm3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350◦C, indicating that bcc Co3Mn alloys have relatively high spin polarization.

AB - We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu/cm3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350◦C, indicating that bcc Co3Mn alloys have relatively high spin polarization.

U2 - 10.7567/1347-4065/ab2f96

DO - 10.7567/1347-4065/ab2f96

M3 - Article

SN - 0021-4922

VL - 58

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

M1 - 080908

ER -