Abstract
Tungsten-coated silicon-based field emitters with a sandwich structure consisting of a cathode tip-insulator-metal gate, were fabricated using microfabrication technology. The radii of the tungsten-coated tips were approximately 30 nm. Each field emitter had a volcano-shaped metal gate aperture with a cathode tip protruding out in the center. The diameter of the smallest metal gate aperture was approximately 1 mu m The silicon dioxide insulating layer was about 1 mu m thick. Field emission studies were carried out under ultra-high vacuum conditions. The lowest turn on voltage of the emitter arrays was 30 V. Current-voltage characteristics were studied and Fowler-Nordheim plots confirmed field emission behavior. Emission current of over 15 mu A was recorded from a single field emitter. Current stability showed fluctuations of up to 60% of its maximum when emission was initiated but improved to 20% after 1-2 h of operation. Emission current did not decrease when the pressure changed from 10-10 to 1 x 10-6 mbar. (C) 1999 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 135-140 |
| Number of pages | 6 |
| Journal | Ultramicroscopy |
| Volume | 79 |
| Issue number | 1-4 |
| Publication status | Published - Sept 1999 |
Keywords
- PERFORMANCE
- ARRAYS
- FABRICATION
- MICROSCOPE
- COLUMN