Abstract
We calculate the quasiparticle electronic structure of a Al/GaAs(110) Schottky barrier as a function of distance from the interface, using the GW self-energy operator. The GaAs band gap is significantly narrowed near the metal, although the classical picture of image-potential narrowing is subject to large quantum corrections. The nature of these corrections is explored further using model calculations.
Original language | English |
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Pages (from-to) | 1685-1688 |
Number of pages | 3 |
Journal | Physical Review Letters |
Volume | 70 |
Issue number | 11 |
DOIs | |
Publication status | Published - 15 Mar 1993 |