First-principles calculations of many-body band-gap narrowing at an Al/GaAs(110) interface

R.W. Godby, J.P.A. Charlesworth, R.J. Needs

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We calculate the quasiparticle electronic structure of a Al/GaAs(110) Schottky barrier as a function of distance from the interface, using the GW self-energy operator. The GaAs band gap is significantly narrowed near the metal, although the classical picture of image-potential narrowing is subject to large quantum corrections. The nature of these corrections is explored further using model calculations.
Original languageEnglish
Pages (from-to)1685-1688
Number of pages3
JournalPhysical Review Letters
Issue number11
Publication statusPublished - 15 Mar 1993

Bibliographical note

© 1993 American Physical Society.

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