Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)

C J Ennis; D J Spence; S P Tear; E M McCash

Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)

C J Ennis, D J Spence, S P Tear, E M McCash

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (< 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (>5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (root 13 x root 13R33.7 degrees silicide reconstruction. This palladium silicide phase is thought to be of Pd3Si stoichiometry.

Original language	English
Pages (from-to)	8443-8449
Number of pages	7
Journal	Physical Review B
Volume	61
Issue number	12
Publication status	Published - 15 Mar 2000

Keywords

SCANNING-TUNNELING-MICROSCOPY
SI INTERFACE
THIN-FILMS
SURFACE
PD
SI(111)
GROWTH
ADSORPTION
AES
DECOMPOSITION

Cite this

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title = "Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)",

abstract = "The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (< 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (>5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (root 13 x root 13R33.7 degrees silicide reconstruction. This palladium silicide phase is thought to be of Pd3Si stoichiometry.",

keywords = "SCANNING-TUNNELING-MICROSCOPY, SI INTERFACE, THIN-FILMS, SURFACE, PD, SI(111), GROWTH, ADSORPTION, AES, DECOMPOSITION",

author = "Ennis, {C J} and Spence, {D J} and Tear, {S P} and McCash, {E M}",

year = "2000",

month = mar,

day = "15",

language = "English",

volume = "61",

pages = "8443--8449",

journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

TY - JOUR

T1 - Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)

AU - Ennis, C J

AU - Spence, D J

AU - Tear, S P

AU - McCash, E M

PY - 2000/3/15

Y1 - 2000/3/15

N2 - The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (< 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (>5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (root 13 x root 13R33.7 degrees silicide reconstruction. This palladium silicide phase is thought to be of Pd3Si stoichiometry.

AB - The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (< 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (>5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (root 13 x root 13R33.7 degrees silicide reconstruction. This palladium silicide phase is thought to be of Pd3Si stoichiometry.

KW - SCANNING-TUNNELING-MICROSCOPY

KW - SI INTERFACE

KW - THIN-FILMS

KW - SURFACE

KW - PD

KW - SI(111)

KW - GROWTH

KW - ADSORPTION

KW - AES

KW - DECOMPOSITION

M3 - Article

SN - 1098-0121

VL - 61

SP - 8443

EP - 8449

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -