The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (ΔGf°). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) ΔGf° leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate ΔGf° is crucial in achieving reliable CBRAM devices.
Bibliographical noteFunding Information:
The authors acknowledge the support from the EPSRC program grant (Grant No. EP/R024642/1), the H2020-FETPROACT-2018-01 SYNCH project, and MSCA EC Grant Agreement No. 224 No. 101029535–MENESIS.
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