Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium

Phillip Bentley; Toby Bird; Aaron Graham; Oskar Fossberg; Steve Tear; Andrew Pratt

doi:10.1063/9.0000154

Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium

Phillip Bentley, Toby Bird, Aaron Graham, Oskar Fossberg, Steve Tear, Andrew Pratt

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Activation of the carbon buffer layer on 4H- and 6H-SiC substrates using elements with high magnetic moments may lead to novel graphene/SiC-based spintronic devices. In this work, we use a variety of surface analysis techniques to explore the intercalation of Er underneath the buffer layer showing evidence for the associated formation of quasi-free-standing graphene (QFSG). A combined analysis of low energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), and metastable de-excitation spectroscopy (MDS) data reveals that annealing at temperatures up to 1073 K leads to deposited Er clustering at the surface. The data suggest that intercalation of Er occurs at 1273 K leading to the breaking of back-bonds between the carbon buffer layer and the underlying SiC substrate and the formation of QFSG. Further annealing at 1473 K does not lead to the desorption of Er atoms but does result in further graphitization of the surface.

Original language	English
Article number	025314
Number of pages	6
Journal	RSC Advances
Volume	11
Early online date	8 Feb 2021
DOIs	https://doi.org/10.1063/9.0000154
Publication status	E-pub ahead of print - 8 Feb 2021

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10.1063/9.0000154

Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium
© 2021 Author(s).
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Cite this

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title = "Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium",

abstract = "Activation of the carbon buffer layer on 4H- and 6H-SiC substrates using elements with high magnetic moments may lead to novel graphene/SiC-based spintronic devices. In this work, we use a variety of surface analysis techniques to explore the intercalation of Er underneath the buffer layer showing evidence for the associated formation of quasi-free-standing graphene (QFSG). A combined analysis of low energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), and metastable de-excitation spectroscopy (MDS) data reveals that annealing at temperatures up to 1073 K leads to deposited Er clustering at the surface. The data suggest that intercalation of Er occurs at 1273 K leading to the breaking of back-bonds between the carbon buffer layer and the underlying SiC substrate and the formation of QFSG. Further annealing at 1473 K does not lead to the desorption of Er atoms but does result in further graphitization of the surface.",

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AU - Bentley, Phillip

AU - Bird, Toby

AU - Graham, Aaron

AU - Fossberg, Oskar

AU - Tear, Steve

AU - Pratt, Andrew

PY - 2021/2/8

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AB - Activation of the carbon buffer layer on 4H- and 6H-SiC substrates using elements with high magnetic moments may lead to novel graphene/SiC-based spintronic devices. In this work, we use a variety of surface analysis techniques to explore the intercalation of Er underneath the buffer layer showing evidence for the associated formation of quasi-free-standing graphene (QFSG). A combined analysis of low energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), and metastable de-excitation spectroscopy (MDS) data reveals that annealing at temperatures up to 1073 K leads to deposited Er clustering at the surface. The data suggest that intercalation of Er occurs at 1273 K leading to the breaking of back-bonds between the carbon buffer layer and the underlying SiC substrate and the formation of QFSG. Further annealing at 1473 K does not lead to the desorption of Er atoms but does result in further graphitization of the surface.

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