Projects per year
Abstract
A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 (Formula presented.)) is grown onto a c-cut Al 2O 3-substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in-plane rotated m-HfO 2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming-free resistive random access memory devices. Combining X-ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High-resolution STEM reveals low-energy grain boundaries with facing ((Formula presented.)) and ((Formula presented.) 21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra- and device-to-device variation in grain boundary engineered hafnium-oxide-based random access memory devices.
Original language | English |
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Article number | 1900484 |
Journal | Advanced Electronic Materials |
Early online date | 5 Aug 2019 |
DOIs | |
Publication status | E-pub ahead of print - 5 Aug 2019 |
Bibliographical note
© Authors, 2019Keywords
- grain boundary engineering
- hafnium oxide
- resistive switching memory
- texture transfer
- transmission electron microscopy
Projects
- 1 Finished
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High-throughput screening of polycrystalline solar absorbers (Ext.)
McKenna, K. P. (Principal investigator)
1/01/18 → 31/03/21
Project: Research project (funded) › Research
Datasets
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Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
McKenna, K. P. (Creator), University of York, 2019
DOI: 10.15124/ddd777f1-0e57-41dc-b843-449d7268e617
Dataset