Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

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Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. / Petzold, Stefan; Zintler, Alexander; Eilhardt, Robert; Piros, Eszter; Kaiser, Nico; Sharath, Sankaramangalam; Vogel, Tobias; Major, Márton; McKenna, Keith Patrick; Molina-Luna, Leopoldo; Alff, Lambert.

In: Advanced Electronic Materials, 05.08.2019.

Research output: Contribution to journalArticle

Harvard

Petzold, S, Zintler, A, Eilhardt, R, Piros, E, Kaiser, N, Sharath, S, Vogel, T, Major, M, McKenna, KP, Molina-Luna, L & Alff, L 2019, 'Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices', Advanced Electronic Materials. https://doi.org/10.1002/aelm.201900484

APA

Petzold, S., Zintler, A., Eilhardt, R., Piros, E., Kaiser, N., Sharath, S., ... Alff, L. (2019). Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials, [1900484]. https://doi.org/10.1002/aelm.201900484

Vancouver

Petzold S, Zintler A, Eilhardt R, Piros E, Kaiser N, Sharath S et al. Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials. 2019 Aug 5. 1900484. https://doi.org/10.1002/aelm.201900484

Author

Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina-Luna, Leopoldo ; Alff, Lambert. / Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. In: Advanced Electronic Materials. 2019.

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@article{6380d51599a8454faa039927a4a4f79f,
title = "Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices",
abstract = "A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 (Formula presented.)) is grown onto a c-cut Al 2O 3-substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in-plane rotated m-HfO 2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming-free resistive random access memory devices. Combining X-ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High-resolution STEM reveals low-energy grain boundaries with facing ((Formula presented.)) and ((Formula presented.) 21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra- and device-to-device variation in grain boundary engineered hafnium-oxide-based random access memory devices.",
keywords = "grain boundary engineering, hafnium oxide, resistive switching memory, texture transfer, transmission electron microscopy",
author = "Stefan Petzold and Alexander Zintler and Robert Eilhardt and Eszter Piros and Nico Kaiser and Sankaramangalam Sharath and Tobias Vogel and M{\'a}rton Major and McKenna, {Keith Patrick} and Leopoldo Molina-Luna and Lambert Alff",
note = "{\circledC} Authors, 2019",
year = "2019",
month = "8",
day = "5",
doi = "10.1002/aelm.201900484",
language = "English",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

AU - Petzold, Stefan

AU - Zintler, Alexander

AU - Eilhardt, Robert

AU - Piros, Eszter

AU - Kaiser, Nico

AU - Sharath, Sankaramangalam

AU - Vogel, Tobias

AU - Major, Márton

AU - McKenna, Keith Patrick

AU - Molina-Luna, Leopoldo

AU - Alff, Lambert

N1 - © Authors, 2019

PY - 2019/8/5

Y1 - 2019/8/5

N2 - A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 (Formula presented.)) is grown onto a c-cut Al 2O 3-substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in-plane rotated m-HfO 2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming-free resistive random access memory devices. Combining X-ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High-resolution STEM reveals low-energy grain boundaries with facing ((Formula presented.)) and ((Formula presented.) 21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra- and device-to-device variation in grain boundary engineered hafnium-oxide-based random access memory devices.

AB - A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 (Formula presented.)) is grown onto a c-cut Al 2O 3-substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in-plane rotated m-HfO 2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming-free resistive random access memory devices. Combining X-ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High-resolution STEM reveals low-energy grain boundaries with facing ((Formula presented.)) and ((Formula presented.) 21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra- and device-to-device variation in grain boundary engineered hafnium-oxide-based random access memory devices.

KW - grain boundary engineering

KW - hafnium oxide

KW - resistive switching memory

KW - texture transfer

KW - transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=85070200093&partnerID=8YFLogxK

U2 - 10.1002/aelm.201900484

DO - 10.1002/aelm.201900484

M3 - Article

JO - Advanced Electronic Materials

T2 - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

M1 - 1900484

ER -