Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities

Eugene A. Avrutin; Boris S. Ryvkin; Alexey S. Payusov; Artem A. Serin; Nikita Yu Gordeev

doi:10.1088/0268-1242/30/11/115007

Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities

Eugene A. Avrutin, Boris S. Ryvkin, Alexey S. Payusov, Artem A. Serin, Nikita Yu Gordeev

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.

Original language	English
Article number	115007
Journal	Semiconductor science and technology
Volume	30
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/30/11/115007
Publication status	Published - 6 Oct 2015

Keywords

high power lasers
semiconductor lasers
single mode operation

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10.1088/0268-1242/30/11/115007

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title = "Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities",

abstract = "It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.",

keywords = "high power lasers, semiconductor lasers, single mode operation",

author = "Avrutin, {Eugene A.} and Ryvkin, {Boris S.} and Payusov, {Alexey S.} and Serin, {Artem A.} and Gordeev, {Nikita Yu}",

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AU - Avrutin, Eugene A.

AU - Ryvkin, Boris S.

AU - Payusov, Alexey S.

AU - Serin, Artem A.

AU - Gordeev, Nikita Yu

PY - 2015/10/6

Y1 - 2015/10/6

N2 - It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.

AB - It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.

KW - high power lasers

KW - semiconductor lasers

KW - single mode operation

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JO - Semiconductor science and technology

JF - Semiconductor science and technology

SN - 0268-1242

IS - 11

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ER -

Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities

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