Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Xiaoqian Zhang; Siddhesh C. Ambhire; Qiangsheng Lu; Wei Niu; Jacob Cook; Jidong Samuel Jiang; Deshun Hong; Laith Alahmed; Liang He; Rong Zhang; Yongbing Xu; Steven S.L. Zhang; Peng Li; Guang Bian

doi:10.1021/acsnano.1c05519

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe₂/Bi₂Te₃

Xiaoqian Zhang, Siddhesh C. Ambhire, Qiangsheng Lu, Wei Niu, Jacob Cook, Jidong Samuel Jiang, Deshun Hong, Laith Alahmed, Liang He, Rong Zhang, Yongbing Xu, Steven S.L. Zhang, Peng Li, Guang Bian

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μω·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.

Original language	English
Pages (from-to)	15710–15719
Number of pages	10
Journal	ACS Nano
Volume	15
Issue number	10
Early online date	30 Aug 2021
DOIs	https://doi.org/10.1021/acsnano.1c05519
Publication status	Published - 26 Oct 2021

Bibliographical note

Funding Information:
This work was supported by the National Key Research and Development Program of China (No. 2016YFA0300803, No. 2017YFA0206304), the National Basic Research Program of China (No. 2014CB921101), the National Natural Science Foundation of China (No. 61427812, 11774160, 11574137, 61474061, 61674079), and Jiangsu Shuangchuang Program, the Natural Science Foundation of Jiangsu Province of China (No. BK20192006, BK20140054). G.B. was supported by the US National Science Foundation (NSF-DMR#1809160). Work by S.C.A. and S.S.-L.Z. was supported by the College of Arts and Sciences, Case Western Reserve University. L.A. acknowledges the NSF under grant No. DMR-2129879335 and Auburn University Research Support Program. P.L. acknowledges the support of Ralph E. Powe Junior Faculty Enhancement Award. W.N. was supported by the Natural Science Foundation of China (Grant No. 11904174), Natural Science Foundation of Jiangsu Province (Grant No. BK20190729), NUPTSF (Grant No. NY219024, NY220203), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510047), and High-level Innovation and Entrepreneurship Talents Introduction Program of Jiangsu Province of China. Work at ANL was supported by the U.S. DOE, BES under Contract No. DE-AC02-06CH11357.

© 2021 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

Keywords

epitaxial growth
topological Hall effect
topological insulators
two-dimensional ferromagnets
van der Waals materials

Access to Document

10.1021/acsnano.1c05519

CrTe2 THE paper 2021.0621_Acs nano, final
© 2021 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
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Cite this

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title = "Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3",

abstract = "Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μω·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.",

keywords = "epitaxial growth, topological Hall effect, topological insulators, two-dimensional ferromagnets, van der Waals materials",

author = "Xiaoqian Zhang and Ambhire, {Siddhesh C.} and Qiangsheng Lu and Wei Niu and Jacob Cook and Jiang, {Jidong Samuel} and Deshun Hong and Laith Alahmed and Liang He and Rong Zhang and Yongbing Xu and Zhang, {Steven S.L.} and Peng Li and Guang Bian",

note = "Funding Information: This work was supported by the National Key Research and Development Program of China (No. 2016YFA0300803, No. 2017YFA0206304), the National Basic Research Program of China (No. 2014CB921101), the National Natural Science Foundation of China (No. 61427812, 11774160, 11574137, 61474061, 61674079), and Jiangsu Shuangchuang Program, the Natural Science Foundation of Jiangsu Province of China (No. BK20192006, BK20140054). G.B. was supported by the US National Science Foundation (NSF-DMR#1809160). Work by S.C.A. and S.S.-L.Z. was supported by the College of Arts and Sciences, Case Western Reserve University. L.A. acknowledges the NSF under grant No. DMR-2129879335 and Auburn University Research Support Program. P.L. acknowledges the support of Ralph E. Powe Junior Faculty Enhancement Award. W.N. was supported by the Natural Science Foundation of China (Grant No. 11904174), Natural Science Foundation of Jiangsu Province (Grant No. BK20190729), NUPTSF (Grant No. NY219024, NY220203), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510047), and High-level Innovation and Entrepreneurship Talents Introduction Program of Jiangsu Province of China. Work at ANL was supported by the U.S. DOE, BES under Contract No. DE-AC02-06CH11357. {\textcopyright} 2021 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details",

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T1 - Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

AU - Zhang, Xiaoqian

AU - Ambhire, Siddhesh C.

AU - Lu, Qiangsheng

AU - Niu, Wei

AU - Cook, Jacob

AU - Jiang, Jidong Samuel

AU - Hong, Deshun

AU - Alahmed, Laith

AU - He, Liang

AU - Zhang, Rong

AU - Xu, Yongbing

AU - Zhang, Steven S.L.

AU - Li, Peng

AU - Bian, Guang

N1 - Funding Information: This work was supported by the National Key Research and Development Program of China (No. 2016YFA0300803, No. 2017YFA0206304), the National Basic Research Program of China (No. 2014CB921101), the National Natural Science Foundation of China (No. 61427812, 11774160, 11574137, 61474061, 61674079), and Jiangsu Shuangchuang Program, the Natural Science Foundation of Jiangsu Province of China (No. BK20192006, BK20140054). G.B. was supported by the US National Science Foundation (NSF-DMR#1809160). Work by S.C.A. and S.S.-L.Z. was supported by the College of Arts and Sciences, Case Western Reserve University. L.A. acknowledges the NSF under grant No. DMR-2129879335 and Auburn University Research Support Program. P.L. acknowledges the support of Ralph E. Powe Junior Faculty Enhancement Award. W.N. was supported by the Natural Science Foundation of China (Grant No. 11904174), Natural Science Foundation of Jiangsu Province (Grant No. BK20190729), NUPTSF (Grant No. NY219024, NY220203), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB510047), and High-level Innovation and Entrepreneurship Talents Introduction Program of Jiangsu Province of China. Work at ANL was supported by the U.S. DOE, BES under Contract No. DE-AC02-06CH11357. © 2021 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

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N2 - Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μω·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.

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KW - epitaxial growth

KW - topological Hall effect

KW - topological insulators

KW - two-dimensional ferromagnets

KW - van der Waals materials

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