Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films

Teodor Huminiuc; Oliver Whear; Andrew James Vick; David Lloyd; Gonzalo Vallejo Fernandez; Kevin Dermot O'Grady; Atsufumi Hirohata

doi:10.3390/magnetochemistry7090127

Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films

Teodor Huminiuc, Oliver Whear, Andrew James Vick, David Lloyd, Gonzalo Vallejo Fernandez, Kevin Dermot O'Grady, Atsufumi Hirohata

Research output: Contribution to journal › Article › peer-review

Abstract

Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heulser alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

Original language	English
Article number	127
Number of pages	8
Journal	Magnetochemistry
Volume	7
Issue number	9
DOIs	https://doi.org/10.3390/magnetochemistry7090127
Publication status	Published - 13 Sept 2021

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10.3390/magnetochemistry7090127Licence: CC BY

magnetochemistry-07-00127
© 2021, The Author(s).
Final published version, 1.91 MBLicence: CC BY

Cite this

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abstract = "Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heulser alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.",

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AU - Huminiuc, Teodor

AU - Whear, Oliver

AU - Vick, Andrew James

AU - Lloyd, David

AU - Vallejo Fernandez, Gonzalo

AU - O'Grady, Kevin Dermot

AU - Hirohata, Atsufumi

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AB - Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heulser alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

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