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From the same journal

Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films

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DateAccepted/In press - 9 Sep 2021
DatePublished (current) - 13 Sep 2021
Original languageEnglish


Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heulser alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

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© 2021, The Author(s).

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