Growth and electronic structure of holmium silicides by STM and STS

E W Perkins; I M Scott; S P Tear

doi:10.1016/j.susc.2005.01.016

Growth and electronic structure of holmium silicides by STM and STS

E W Perkins, I M Scott, S P Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of holmium on the Si(111) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 x 2 and (2 root 3 x 2 root 3)R30 degrees were observed during the nucleation of the 1 x 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 x 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides. (c) 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	80-87
Number of pages	8
Journal	Surface Science
Volume	578
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2005.01.016
Publication status	Published - 10 Mar 2005

Keywords

scanning tunneling microscopy
scanning tunneling spectroscopies
solid phase epitaxy
growth
surface relaxation and reconstruction
lanthanides
silicides
metal-semiconductor interfaces
SCANNING-TUNNELING-MICROSCOPY
2-DIMENSIONAL ER SILICIDE
RARE-EARTH SILICIDES
SI(111)
SURFACE
RECONSTRUCTION
MORPHOLOGY
PHASES
FILMS
SI

Access to Document

10.1016/j.susc.2005.01.016

Cite this

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title = "Growth and electronic structure of holmium silicides by STM and STS",

abstract = "The growth of holmium on the Si(111) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 x 2 and (2 root 3 x 2 root 3)R30 degrees were observed during the nucleation of the 1 x 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 x 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides. (c) 2005 Elsevier B.V. All rights reserved.",

keywords = "scanning tunneling microscopy, scanning tunneling spectroscopies, solid phase epitaxy, growth, surface relaxation and reconstruction, lanthanides, silicides, metal-semiconductor interfaces, SCANNING-TUNNELING-MICROSCOPY, 2-DIMENSIONAL ER SILICIDE, RARE-EARTH SILICIDES, SI(111), SURFACE, RECONSTRUCTION, MORPHOLOGY, PHASES, FILMS, SI",

author = "Perkins, {E W} and Scott, {I M} and Tear, {S P}",

year = "2005",

month = mar,

day = "10",

doi = "10.1016/j.susc.2005.01.016",

language = "English",

volume = "578",

pages = "80--87",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Growth and electronic structure of holmium silicides by STM and STS

AU - Perkins, E W

AU - Scott, I M

AU - Tear, S P

PY - 2005/3/10

Y1 - 2005/3/10

N2 - The growth of holmium on the Si(111) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 x 2 and (2 root 3 x 2 root 3)R30 degrees were observed during the nucleation of the 1 x 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 x 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides. (c) 2005 Elsevier B.V. All rights reserved.

AB - The growth of holmium on the Si(111) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 x 2 and (2 root 3 x 2 root 3)R30 degrees were observed during the nucleation of the 1 x 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 x 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides. (c) 2005 Elsevier B.V. All rights reserved.

KW - scanning tunneling microscopy

KW - scanning tunneling spectroscopies

KW - solid phase epitaxy

KW - growth

KW - surface relaxation and reconstruction

KW - lanthanides

KW - silicides

KW - metal-semiconductor interfaces

KW - SCANNING-TUNNELING-MICROSCOPY

KW - 2-DIMENSIONAL ER SILICIDE

KW - RARE-EARTH SILICIDES

KW - SI(111)

KW - SURFACE

KW - RECONSTRUCTION

KW - MORPHOLOGY

KW - PHASES

KW - FILMS

KW - SI

U2 - 10.1016/j.susc.2005.01.016

DO - 10.1016/j.susc.2005.01.016

M3 - Article

SN - 0039-6028

VL - 578

SP - 80

EP - 87

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -