Abstract
Different thickness of ultrathin films of magnetite (Fe3O4) have been grown epitaxially on zinc-blende narrow band-gap semiconductor InAs(100) surfaces by in situ post-growth annealing of ultrathin epitaxial Fe films at 300 degrees C in an oxygen partial pressure of 5 x 10(-5) mbar. Reflection high-energy electron-diffraction patterns show that the epitaxial Fe3O4 films have been rotated by 458 in-plane to match the InAs substrates. The magnetic hysteresis loops obtained by magneto-optic Kerr effect (MOKE) shows a in-plane uniaxial magnetic anisotropy for the ultrathin films, and the global easy axis is rotated from the uniaxial easy [011] direction to the cubic easy [010] direction when the thickness of the film increases. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original language | English |
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Pages (from-to) | 2377-2379 |
Number of pages | 3 |
Journal | Physica status solidi a-Applications and materials science |
Volume | 208 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 2011 |
Keywords
- uniaxial anisotropy
- MOLECULAR-BEAM EPITAXY
- epitaxial growth
- FE FILMS
- ANISOTROPY
- magnetite
- magnetic properties