Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

Atsuya Yamada; Michihiro Yamada; Shuhei Kusumoto; Julio A. do Nascimento; Connor Murrill; Shinya Yamada; Kentarou Sawano; Vlado K. Lazarov; Kohei Hamaya

doi:10.1016/j.mssp.2024.108140

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si

Atsuya Yamada, Michihiro Yamada, Shuhei Kusumoto, Julio A. do Nascimento, Connor Murrill, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We explore epitaxial growth of Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si, where the Co₂MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.

Original language	English
Article number	108140
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	173
Early online date	20 Jan 2024
DOIs	https://doi.org/10.1016/j.mssp.2024.108140
Publication status	Published - 1 Apr 2024

Bibliographical note

Funding Information:
We acknowledge Prof. Y. Suzuki and Prof. Y. Niimi for lots of experimental supports. This work was supported by JST PRESTO (No. JPMJPR20BA ), JSPS KAKENHI (Grants No. 19H05616 and 21H05000) , JST CREST (Grant No. JPMJCR23A5 ), the Spintronics Research Network of Japan (Spin-RNJ) , and MEXT , X-NICS (Grant No. JPJ011438 ). A. Yamada acknowledges JSPS Research Fellowship for Young Scientists (Grant No. 23KJ1446 ) and the Program for Leading Graduate Schools: “Interactive Materials Science Cadet Program” .
This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.
Publisher Copyright:
© 2024

Keywords

CoMnSi
Ge
Spintronics
Vertical spin-valve device

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10.1016/j.mssp.2024.108140

Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si
This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.
Accepted author manuscript, 692 KBLicence: CC BY

Cite this

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title = "Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si",

abstract = "We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.",

keywords = "CoMnSi, Ge, Spintronics, Vertical spin-valve device",

author = "Atsuya Yamada and Michihiro Yamada and Shuhei Kusumoto and {do Nascimento}, {Julio A.} and Connor Murrill and Shinya Yamada and Kentarou Sawano and Lazarov, {Vlado K.} and Kohei Hamaya",

note = "Funding Information: We acknowledge Prof. Y. Suzuki and Prof. Y. Niimi for lots of experimental supports. This work was supported by JST PRESTO (No. JPMJPR20BA ), JSPS KAKENHI (Grants No. 19H05616 and 21H05000) , JST CREST (Grant No. JPMJCR23A5 ), the Spintronics Research Network of Japan (Spin-RNJ) , and MEXT , X-NICS (Grant No. JPJ011438 ). A. Yamada acknowledges JSPS Research Fellowship for Young Scientists (Grant No. 23KJ1446 ) and the Program for Leading Graduate Schools: “Interactive Materials Science Cadet Program” . This is an author-produced version of the published paper. Uploaded in accordance with the University{\textquoteright}s Research Publications and Open Access policy. Publisher Copyright: {\textcopyright} 2024",

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AU - Murrill, Connor

AU - Yamada, Shinya

AU - Sawano, Kentarou

AU - Lazarov, Vlado K.

AU - Hamaya, Kohei

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N2 - We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.

AB - We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.

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