Growth of polycrystalline Heusler alloys for spintronic devices

James Sagar; Chris Nga Tung Yu; Leonardo Lari; Atsufumi Hirohata

doi:10.1088/0022-3727/47/26/265002

Growth of polycrystalline Heusler alloys for spintronic devices

James Sagar, Chris Nga Tung Yu, Leonardo Lari, Atsufumi Hirohata

Research output: Contribution to journal › Article › peer-review

Abstract

We have prepared polycrystalline Co2FeSi thin films on a number of seed layers to optimize their structural and magnetic properties. Using a Cr/Ag combined seed layer, films have been produced with extremely low interfacial roughness (<1 nm) and controllable coercivities in the range 12–27 Oe. Such a structure would be suitable for the free layer in a spintronic device. Using a NiCr seed layer and IrMn as an antiferromagnetic layer a small exchange bias of ~30 Oe has been achieved. However the use of a 0.5 nm Mn layer at the IrMn/Co2FeSi interface increases the exchange bias (Hex) to 375 Oe after annealing. This structure would be suitable for the pinned layer in a spintronic device.

Original language	English
Article number	265002
Journal	Journal of Physics D: Applied Physics
Volume	47
Issue number	26
DOIs	https://doi.org/10.1088/0022-3727/47/26/265002
Publication status	Published - 10 Jun 2014

Access to Document

10.1088/0022-3727/47/26/265002

Cite this

@article{18fc03745a294890a2fa105cb6a20743,

title = "Growth of polycrystalline Heusler alloys for spintronic devices",

abstract = "We have prepared polycrystalline Co2FeSi thin films on a number of seed layers to optimize their structural and magnetic properties. Using a Cr/Ag combined seed layer, films have been produced with extremely low interfacial roughness (<1 nm) and controllable coercivities in the range 12–27 Oe. Such a structure would be suitable for the free layer in a spintronic device. Using a NiCr seed layer and IrMn as an antiferromagnetic layer a small exchange bias of ~30 Oe has been achieved. However the use of a 0.5 nm Mn layer at the IrMn/Co2FeSi interface increases the exchange bias (Hex) to 375 Oe after annealing. This structure would be suitable for the pinned layer in a spintronic device.",

author = "James Sagar and Yu, {Chris Nga Tung} and Leonardo Lari and Atsufumi Hirohata",

year = "2014",

month = jun,

day = "10",

doi = "10.1088/0022-3727/47/26/265002",

language = "English",

volume = "47",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "26",

}

TY - JOUR

T1 - Growth of polycrystalline Heusler alloys for spintronic devices

AU - Sagar, James

AU - Yu, Chris Nga Tung

AU - Lari, Leonardo

AU - Hirohata, Atsufumi

PY - 2014/6/10

Y1 - 2014/6/10

N2 - We have prepared polycrystalline Co2FeSi thin films on a number of seed layers to optimize their structural and magnetic properties. Using a Cr/Ag combined seed layer, films have been produced with extremely low interfacial roughness (<1 nm) and controllable coercivities in the range 12–27 Oe. Such a structure would be suitable for the free layer in a spintronic device. Using a NiCr seed layer and IrMn as an antiferromagnetic layer a small exchange bias of ~30 Oe has been achieved. However the use of a 0.5 nm Mn layer at the IrMn/Co2FeSi interface increases the exchange bias (Hex) to 375 Oe after annealing. This structure would be suitable for the pinned layer in a spintronic device.

AB - We have prepared polycrystalline Co2FeSi thin films on a number of seed layers to optimize their structural and magnetic properties. Using a Cr/Ag combined seed layer, films have been produced with extremely low interfacial roughness (<1 nm) and controllable coercivities in the range 12–27 Oe. Such a structure would be suitable for the free layer in a spintronic device. Using a NiCr seed layer and IrMn as an antiferromagnetic layer a small exchange bias of ~30 Oe has been achieved. However the use of a 0.5 nm Mn layer at the IrMn/Co2FeSi interface increases the exchange bias (Hex) to 375 Oe after annealing. This structure would be suitable for the pinned layer in a spintronic device.

U2 - 10.1088/0022-3727/47/26/265002

DO - 10.1088/0022-3727/47/26/265002

M3 - Article

SN - 0022-3727

VL - 47

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 26

M1 - 265002

ER -