Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes

Boris Ryvkin; Eugene Avrutin

doi:10.1063/1.2749464

Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes

Boris Ryvkin, Eugene Avrutin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power lambda=1.06 mu m semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted. (c) 2007 American Institute of Physics.

Original language	English
Article number	123115
Number of pages	5
Journal	Journal of Applied Physics
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.2749464
Publication status	Published - 15 Jun 2007

Keywords

SEMICONDUCTOR-LASERS
EFFICIENCY
HETEROSTRUCTURES
ABSORPTION
THRESHOLD
DESIGN

Access to Document

10.1063/1.2749464

Cite this

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abstract = "We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power lambda=1.06 mu m semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted. (c) 2007 American Institute of Physics.",

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AU - Ryvkin, Boris

AU - Avrutin, Eugene

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N2 - We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power lambda=1.06 mu m semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted. (c) 2007 American Institute of Physics.

AB - We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power lambda=1.06 mu m semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted. (c) 2007 American Institute of Physics.

KW - SEMICONDUCTOR-LASERS

KW - EFFICIENCY

KW - HETEROSTRUCTURES

KW - ABSORPTION

KW - THRESHOLD

KW - DESIGN

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DO - 10.1063/1.2749464

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JO - Journal of Applied Physics

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