Heusler-alloy films for spintronic devices

A. Hirohata; J. Sagar; Leonardo Lari; L.R. Fleet; V.K. Lazarov

doi:10.1007/s00339-013-7679-2

Heusler-alloy films for spintronic devices

A. Hirohata, J. Sagar, Leonardo Lari, L.R. Fleet, V.K. Lazarov

Research output: Contribution to journal › Article › peer-review

Abstract

The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.

Original language	English
Pages (from-to)	423-430
Journal	Applied physics A-Materials science & processing
Volume	111
Issue number	2
DOIs	https://doi.org/10.1007/s00339-013-7679-2
Publication status	Published - 1 Jan 2013

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10.1007/s00339-013-7679-2

http://link.springer.com/article/10.1007%2Fs00339-013-7679-2

Cite this

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title = "Heusler-alloy films for spintronic devices",

abstract = "The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.",

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AU - Hirohata, A.

AU - Sagar, J.

AU - Lari, Leonardo

AU - Fleet, L.R.

AU - Lazarov, V.K.

PY - 2013/1/1

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N2 - The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.

AB - The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.

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