Heusler Alloys with bcc Tungsten Seed Layers for GMR Junctions

TY - JOUR

T1 - Heusler Alloys with bcc Tungsten Seed Layers for GMR Junctions

AU - Frost, William

AU - Hirohata, Atsufumi

N1 - © 2018 Elsevier B.V. All rights reserved. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy.

PY - 2018/1/8

Y1 - 2018/1/8

N2 - We demonstrate that polycrystalline Co 2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co 2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

AB - We demonstrate that polycrystalline Co 2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co 2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

KW - Heusler alloys

KW - Perpendicular anisotropy

KW - Spin-valves

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=85041486621&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2018.01.015

DO - 10.1016/j.jmmm.2018.01.015

M3 - Article

SN - 0304-8853

VL - 453

SP - 182

EP - 185

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -