High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers

Jaakko M T Huikari, Eugene A. Avrutin, Boris S. Ryvkin, Jan J. Nissinen, Juha Tapio Kostamovaara

Research output: Contribution to journalArticlepeer-review


A multiple quantum well laser diode utilizing an asymmetric waveguide structure with a large equivalent spot size of ∼3 μm is shown to give high energy (∼1 nJ) and short (∼100 ps) isolated optical pulses when injected with <10 A and ∼1-ns current pulses realized with a MOS driver. The active dimensions of the laser diode are 30 μm (stripe width) and 3 mm (cavity length), and it works in a single transversal mode at a wavelength of ∼0.8 μm. Detailed investigation of the laser behavior at elevated temperatures is conducted; it is shown that at high enough injection currents, lasers of the investigated type show low temperature sensitivity. Laser diodes of this type may find use in accurate and miniaturized laser radars utilizing single photon detection in the receiver.

Original languageEnglish
Article number7067351
Number of pages6
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number6
Early online date25 Mar 2015
Publication statusPublished - 1 Nov 2015


  • Gain switching
  • Laser radar
  • Optical Pulses
  • Quantum Well lasers
  • Semiconductor lasers

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