High-energy sub-nanosecond optical pulse generation with a semiconductor laser diode for pulsed TOF laser ranging utilizing the single photon detection approach

Jaakko Huikari; Eugene Avrutin; Boris Ryvkin; Juha Kostamovaara

doi:10.1007/s10043-016-0189-7

High-energy sub-nanosecond optical pulse generation with a semiconductor laser diode for pulsed TOF laser ranging utilizing the single photon detection approach

Jaakko Huikari^*, Eugene Avrutin, Boris Ryvkin, Juha Kostamovaara

^*Corresponding author for this work

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Bulk and quantum well laser diodes with a large equivalent spot size of d_a/Γ_a ≈ 3 µm and stripe width/cavity length of 30 µm/3 mm were realized and tested. They achieved a pulse energy and pulse length of the order of ~1 nJ and ~100 ps, respectively, with a peak pulse current of 6–8 A and a current pulse width of 1 ns. The 2D characteristics of the optical output power versus wavelength and time were also analyzed with a monochromator/streak camera set-up. The far-field characteristics were studied with respect to the time-homogeneity and energy distribution. The feasibility of a laser diode with a large equivalent spot size in single photon detection based laser ranging was demonstrated to a non-cooperative target at a distance of a few tens of meters.

Original language	English
Pages (from-to)	522-528
Number of pages	7
Journal	Optical Review
Volume	23
Issue number	3
Early online date	13 Feb 2016
DOIs	https://doi.org/10.1007/s10043-016-0189-7
Publication status	Published - 1 Jun 2016

Bibliographical note

©The Author(s) 2016.

Keywords

Gain switching
Laser radar
Laser ranging
Semiconductor laser diode
Single photon detection
Solid-state scanner

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art_10.1007_s10043-016-0189-7
©The Author(s) 2016.
Final published version, 1.89 MBLicence: CC BY

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title = "High-energy sub-nanosecond optical pulse generation with a semiconductor laser diode for pulsed TOF laser ranging utilizing the single photon detection approach",

abstract = "Bulk and quantum well laser diodes with a large equivalent spot size of da/Γa ≈ 3 µm and stripe width/cavity length of 30 µm/3 mm were realized and tested. They achieved a pulse energy and pulse length of the order of ~1 nJ and ~100 ps, respectively, with a peak pulse current of 6–8 A and a current pulse width of 1 ns. The 2D characteristics of the optical output power versus wavelength and time were also analyzed with a monochromator/streak camera set-up. The far-field characteristics were studied with respect to the time-homogeneity and energy distribution. The feasibility of a laser diode with a large equivalent spot size in single photon detection based laser ranging was demonstrated to a non-cooperative target at a distance of a few tens of meters.",

keywords = "Gain switching, Laser radar, Laser ranging, Semiconductor laser diode, Single photon detection, Solid-state scanner",

author = "Jaakko Huikari and Eugene Avrutin and Boris Ryvkin and Juha Kostamovaara",

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T1 - High-energy sub-nanosecond optical pulse generation with a semiconductor laser diode for pulsed TOF laser ranging utilizing the single photon detection approach

AU - Huikari, Jaakko

AU - Avrutin, Eugene

AU - Ryvkin, Boris

AU - Kostamovaara, Juha

N1 - ©The Author(s) 2016.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Bulk and quantum well laser diodes with a large equivalent spot size of da/Γa ≈ 3 µm and stripe width/cavity length of 30 µm/3 mm were realized and tested. They achieved a pulse energy and pulse length of the order of ~1 nJ and ~100 ps, respectively, with a peak pulse current of 6–8 A and a current pulse width of 1 ns. The 2D characteristics of the optical output power versus wavelength and time were also analyzed with a monochromator/streak camera set-up. The far-field characteristics were studied with respect to the time-homogeneity and energy distribution. The feasibility of a laser diode with a large equivalent spot size in single photon detection based laser ranging was demonstrated to a non-cooperative target at a distance of a few tens of meters.

AB - Bulk and quantum well laser diodes with a large equivalent spot size of da/Γa ≈ 3 µm and stripe width/cavity length of 30 µm/3 mm were realized and tested. They achieved a pulse energy and pulse length of the order of ~1 nJ and ~100 ps, respectively, with a peak pulse current of 6–8 A and a current pulse width of 1 ns. The 2D characteristics of the optical output power versus wavelength and time were also analyzed with a monochromator/streak camera set-up. The far-field characteristics were studied with respect to the time-homogeneity and energy distribution. The feasibility of a laser diode with a large equivalent spot size in single photon detection based laser ranging was demonstrated to a non-cooperative target at a distance of a few tens of meters.

KW - Gain switching

KW - Laser radar

KW - Laser ranging

KW - Semiconductor laser diode

KW - Single photon detection

KW - Solid-state scanner

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EP - 528

JO - Optical Review

JF - Optical Review

IS - 3

ER -

High-energy sub-nanosecond optical pulse generation with a semiconductor laser diode for pulsed TOF laser ranging utilizing the single photon detection approach

Abstract

Bibliographical note

Keywords

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