Abstract
We report first experimental results on a high-
power pulsed semiconductor laser operating in the eye-safe
spectral range (wavelength around 1.5 μm) with an asymmetric
waveguide structure. The laser has a bulk active layer positioned
very close to the p-cladding in order to eliminate current-induced
nonuniform carrier accumulation in the p-side of the waveguide
and the associated carrier losses. Moderate doping of the n-side
of the waveguide is used to strongly suppress nonuniform carrier
accumulation within this part of the waveguide. Highly p-doped
InP p-cladding facilitates low series resistance. An as-cleaved
sample with a stripe width of 90 μm exhibits an output power of
about 18 W at a pumping current amplitude of 80 A. Theoretical
calculations, validated by comparison to experiment, suggest that
the performance of lasers of this type can be improved further
by optimization of the waveguide thickness and doping as well
as improvement of injection efficiency.
power pulsed semiconductor laser operating in the eye-safe
spectral range (wavelength around 1.5 μm) with an asymmetric
waveguide structure. The laser has a bulk active layer positioned
very close to the p-cladding in order to eliminate current-induced
nonuniform carrier accumulation in the p-side of the waveguide
and the associated carrier losses. Moderate doping of the n-side
of the waveguide is used to strongly suppress nonuniform carrier
accumulation within this part of the waveguide. Highly p-doped
InP p-cladding facilitates low series resistance. An as-cleaved
sample with a stripe width of 90 μm exhibits an output power of
about 18 W at a pumping current amplitude of 80 A. Theoretical
calculations, validated by comparison to experiment, suggest that
the performance of lasers of this type can be improved further
by optimization of the waveguide thickness and doping as well
as improvement of injection efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 1635-1638 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 31 |
| Issue number | 20 |
| Publication status | Published - 25 Sept 2019 |
Bibliographical note
This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.Keywords
- Laser radar, optical pulse generation, semiconductor lasers.