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High Power 1.5 μm Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Near p-cladding

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Author(s)

  • Lauri Hallman
  • Boris Ryvkin
  • Eugene Avrutin
  • Antti Aho
  • Jukka Viheriälä
  • Mircea Guina
  • Juha Tapio Kostamovaara

Department/unit(s)

Publication details

JournalIEEE Photonics Technology Letters
DateAccepted/In press - 3 Sep 2019
DatePublished (current) - 25 Sep 2019
Issue number20
Volume31
Number of pages4
Pages (from-to)1635-1638
Original languageEnglish

Abstract

We report first experimental results on a high-
power pulsed semiconductor laser operating in the eye-safe

spectral range (wavelength around 1.5 μm) with an asymmetric
waveguide structure. The laser has a bulk active layer positioned
very close to the p-cladding in order to eliminate current-induced
nonuniform carrier accumulation in the p-side of the waveguide
and the associated carrier losses. Moderate doping of the n-side
of the waveguide is used to strongly suppress nonuniform carrier
accumulation within this part of the waveguide. Highly p-doped
InP p-cladding facilitates low series resistance. An as-cleaved
sample with a stripe width of 90 μm exhibits an output power of
about 18 W at a pumping current amplitude of 80 A. Theoretical
calculations, validated by comparison to experiment, suggest that
the performance of lasers of this type can be improved further
by optimization of the waveguide thickness and doping as well
as improvement of injection efficiency.

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    Research areas

  • Laser radar, optical pulse generation, semiconductor lasers.

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