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From the same journal

High-Mobility Sm-Doped Bi<inf>2</inf>Se<inf>3</inf> Ferromagnetic Topological Insulators and Robust Exchange Coupling

Research output: Contribution to journalArticle

Published copy (DOI)

Author(s)

  • Taishi Chen
  • Wenqing Liu
  • Fubao Zheng
  • Ming Gao
  • Xingchen Pan
  • Gerrit Van Der Laan
  • Xuefeng Wang
  • Qinfang Zhang
  • Fengqi Song
  • Baigeng Wang
  • Baolin Wang
  • Yongbing Xu
  • Guanghou Wang
  • Rong Zhang

Department/unit(s)

Publication details

JournalAdvanced Materials
DatePublished - 14 Jul 2015
Issue number33
Volume27
Number of pages7
Pages (from-to)4823-4829
Original languageEnglish

Abstract

High-mobility (Sm<inf>x</inf>Bi<inf>1-x</inf>)<inf>2</inf>Se<inf>3</inf> topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10<sup>19</sup> cm<sup>-3</sup> and the mobility can reach about 7200 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> with pronounced Shubnikov-de Haas oscillations.

    Research areas

  • dilute magnetic semiconductors, ferromagnetism, magnetic doping, topological insulators, X-ray magnetic circular dichroism (XMCD)

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