IGBT'S AGEING AND ITS IMPACTS ON THE EM CONDUCTED EMISSIONS

E Dimech*, J F Dawson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

IGBTs play crucial roles in various power electronic applications, demanding reliability over extended periods. Understanding their failure mechanisms is vital for manufacturers and engineers. This study addresses gaps by correlating IGBT degradation, particularly die-attach and gate oxide contamination, with conducted electromagnetic (EM) disturbances. Accelerated aging was conducted on 600V, 16A IGBTs using a power cycling system, revealing significant changes in static and dynamic parameters. Switching transients showed a slowdown in turn-off, attributed to the experienced degradation. Experimental setups demonstrated a direct link between degradation, switching transients, especially collector current (IC) turn-off, and reduced conducted EM disturbances.
Original languageUndefined/Unknown
Title of host publicationEMC Europe 2024
Publication statusAccepted/In press - 30 Apr 2024

Publication series

NameEMC Europe

Bibliographical note

This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy.

Cite this