Imaging doped regions in a semiconductor with very low energy SEM and Auger electrons.

M M El-Gomati; T C R Wells

Imaging doped regions in a semiconductor with very low energy SEM and Auger electrons.

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Regions of n(+) and p(+) semiconductors doped to 2.5 x 10(20) and 8x10(19) cm(-3) respectively on n-type silicon substrate have been imaged in a scanning electron microscope modified for use into a cathode lens mode operating in the region of 110,000 eV. The highest contrast with respect to that of the n-type silicon has been obtained from the n(+) region followed by the p(+). Further, the n(+) area shows a maximum contrast at about 5-20 eV, while the contrast from the p+ area shows a maximum at about 300 eV. Imaging of the sample in UHV was also investigated in parallel with AES of the differently doped regions. The AES revealed the presence of a graphitic carbon surface layer across the sample. The effects of altering the surface conditions with a Cr surface layer were also investigated.

Original language	English
Title of host publication	ELECTRON MICROSCOPY AND ANALYSIS 2001
Editors	M Aindow, CJ Kiely
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	489-492
Number of pages	4
ISBN (Print)	0-7503-0812-5
Publication status	Published - 2001
Event	Conference of the Electron-Microscopy-and Analysis-Group - DUNDEE Duration: 5 Sept 2001 → 7 Sept 2001

Conference

Conference	Conference of the Electron-Microscopy-and Analysis-Group
City	DUNDEE
Period	5/09/01 → 7/09/01

Cite this

@inproceedings{2d7f401104894328997c9778771243e3,

title = "Imaging doped regions in a semiconductor with very low energy SEM and Auger electrons.",

abstract = "Regions of n(+) and p(+) semiconductors doped to 2.5 x 10(20) and 8x10(19) cm(-3) respectively on n-type silicon substrate have been imaged in a scanning electron microscope modified for use into a cathode lens mode operating in the region of 110,000 eV. The highest contrast with respect to that of the n-type silicon has been obtained from the n(+) region followed by the p(+). Further, the n(+) area shows a maximum contrast at about 5-20 eV, while the contrast from the p+ area shows a maximum at about 300 eV. Imaging of the sample in UHV was also investigated in parallel with AES of the differently doped regions. The AES revealed the presence of a graphitic carbon surface layer across the sample. The effects of altering the surface conditions with a Cr surface layer were also investigated.",

author = "El-Gomati, {M M} and Wells, {T C R}",

year = "2001",

language = "English",

isbn = "0-7503-0812-5",

pages = "489--492",

editor = "M Aindow and CJ Kiely",

booktitle = "ELECTRON MICROSCOPY AND ANALYSIS 2001",

publisher = "IOP Publishing",

address = "United Kingdom",

note = "Conference of the Electron-Microscopy-and Analysis-Group ; Conference date: 05-09-2001 Through 07-09-2001",

}

TY - GEN

T1 - Imaging doped regions in a semiconductor with very low energy SEM and Auger electrons.

AU - El-Gomati, M M

AU - Wells, T C R

PY - 2001

Y1 - 2001

N2 - Regions of n(+) and p(+) semiconductors doped to 2.5 x 10(20) and 8x10(19) cm(-3) respectively on n-type silicon substrate have been imaged in a scanning electron microscope modified for use into a cathode lens mode operating in the region of 110,000 eV. The highest contrast with respect to that of the n-type silicon has been obtained from the n(+) region followed by the p(+). Further, the n(+) area shows a maximum contrast at about 5-20 eV, while the contrast from the p+ area shows a maximum at about 300 eV. Imaging of the sample in UHV was also investigated in parallel with AES of the differently doped regions. The AES revealed the presence of a graphitic carbon surface layer across the sample. The effects of altering the surface conditions with a Cr surface layer were also investigated.

AB - Regions of n(+) and p(+) semiconductors doped to 2.5 x 10(20) and 8x10(19) cm(-3) respectively on n-type silicon substrate have been imaged in a scanning electron microscope modified for use into a cathode lens mode operating in the region of 110,000 eV. The highest contrast with respect to that of the n-type silicon has been obtained from the n(+) region followed by the p(+). Further, the n(+) area shows a maximum contrast at about 5-20 eV, while the contrast from the p+ area shows a maximum at about 300 eV. Imaging of the sample in UHV was also investigated in parallel with AES of the differently doped regions. The AES revealed the presence of a graphitic carbon surface layer across the sample. The effects of altering the surface conditions with a Cr surface layer were also investigated.

M3 - Conference contribution

SN - 0-7503-0812-5

SP - 489

EP - 492

BT - ELECTRON MICROSCOPY AND ANALYSIS 2001

A2 - Aindow, M

A2 - Kiely, CJ

PB - IOP Publishing

CY - BRISTOL

T2 - Conference of the Electron-Microscopy-and Analysis-Group

Y2 - 5 September 2001 through 7 September 2001

ER -