Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

G H Jayakody; T R C Wells; M M El-Gomati

doi:10.1016/j.elspec.2004.09.025

Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

G H Jayakody, T R C Wells, M M El-Gomati

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Secondary electron (SE) imaging of planar doped n-type Si has been performed using low voltage (LV) and very low voltage scanning electron microscopy (VLVSEM). The effect of the surface contamination and the SE contrast mechanism has been investigated in two microscopes operated at two different vacuum conditions. SE imaging under conventional vacuum and ultra high vacuum (UHV) conditions with in situ cleaning of the sample surface enables one to identify the contribution of the surface adlayer on the SE contrast. Carrying out in situ thin metal film deposition experiments under UHV conditions validates the proposed contrast mechanism at very low voltages. Also it is reported that the SE contrast depends on the thickness of the surface layer as well as the electron beam voltage used for SE imaging. (c) 2004 Published by Elsevier B.V.

Original language	English
Pages (from-to)	233-239
Number of pages	7
Journal	JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume	143
Issue number	2-3
DOIs	https://doi.org/10.1016/j.elspec.2004.09.025
Publication status	Published - May 2005

Keywords

scanning electron microscopy
low voltage
ultra high vacuum
SCANNING ELECTRON-MICROSCOPE
DOPANT PROFILES
SEMICONDUCTORS

Access to Document

10.1016/j.elspec.2004.09.025

Cite this

@article{2d82aca470e3430e87b0c39c033846d1,

title = "Imaging of doped Si in low and very low voltage SEM: the contrast interpretation",

abstract = "Secondary electron (SE) imaging of planar doped n-type Si has been performed using low voltage (LV) and very low voltage scanning electron microscopy (VLVSEM). The effect of the surface contamination and the SE contrast mechanism has been investigated in two microscopes operated at two different vacuum conditions. SE imaging under conventional vacuum and ultra high vacuum (UHV) conditions with in situ cleaning of the sample surface enables one to identify the contribution of the surface adlayer on the SE contrast. Carrying out in situ thin metal film deposition experiments under UHV conditions validates the proposed contrast mechanism at very low voltages. Also it is reported that the SE contrast depends on the thickness of the surface layer as well as the electron beam voltage used for SE imaging. (c) 2004 Published by Elsevier B.V.",

keywords = "scanning electron microscopy, low voltage, ultra high vacuum, SCANNING ELECTRON-MICROSCOPE, DOPANT PROFILES, SEMICONDUCTORS",

author = "Jayakody, {G H} and Wells, {T R C} and El-Gomati, {M M}",

year = "2005",

month = may,

doi = "10.1016/j.elspec.2004.09.025",

language = "English",

volume = "143",

pages = "233--239",

journal = "JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA",

issn = "0368-2048",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

AU - Jayakody, G H

AU - Wells, T R C

AU - El-Gomati, M M

PY - 2005/5

Y1 - 2005/5

N2 - Secondary electron (SE) imaging of planar doped n-type Si has been performed using low voltage (LV) and very low voltage scanning electron microscopy (VLVSEM). The effect of the surface contamination and the SE contrast mechanism has been investigated in two microscopes operated at two different vacuum conditions. SE imaging under conventional vacuum and ultra high vacuum (UHV) conditions with in situ cleaning of the sample surface enables one to identify the contribution of the surface adlayer on the SE contrast. Carrying out in situ thin metal film deposition experiments under UHV conditions validates the proposed contrast mechanism at very low voltages. Also it is reported that the SE contrast depends on the thickness of the surface layer as well as the electron beam voltage used for SE imaging. (c) 2004 Published by Elsevier B.V.

AB - Secondary electron (SE) imaging of planar doped n-type Si has been performed using low voltage (LV) and very low voltage scanning electron microscopy (VLVSEM). The effect of the surface contamination and the SE contrast mechanism has been investigated in two microscopes operated at two different vacuum conditions. SE imaging under conventional vacuum and ultra high vacuum (UHV) conditions with in situ cleaning of the sample surface enables one to identify the contribution of the surface adlayer on the SE contrast. Carrying out in situ thin metal film deposition experiments under UHV conditions validates the proposed contrast mechanism at very low voltages. Also it is reported that the SE contrast depends on the thickness of the surface layer as well as the electron beam voltage used for SE imaging. (c) 2004 Published by Elsevier B.V.

KW - scanning electron microscopy

KW - low voltage

KW - ultra high vacuum

KW - SCANNING ELECTRON-MICROSCOPE

KW - DOPANT PROFILES

KW - SEMICONDUCTORS

U2 - 10.1016/j.elspec.2004.09.025

DO - 10.1016/j.elspec.2004.09.025

M3 - Article

VL - 143

SP - 233

EP - 239

JO - JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

JF - JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

SN - 0368-2048

IS - 2-3

ER -