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Induced magnetic moment of Eu3+ ions in GaN

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Author(s)

  • V. Kachkanov
  • G. Van Der Laan
  • S.S. Dhesi
  • S.A. Cavill
  • M.J. Wallace
  • K.P. O'Donnell
  • Y. Fujiwara

Department/unit(s)

Publication details

JournalScientific Reports
DatePublished - 1 Jan 2012
Volume2
Original languageEnglish

Abstract

Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu ions in GaN which is associated with the F final state of D → F optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.

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