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Induced magnetic moment of Eu3+ ions in GaN

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Induced magnetic moment of Eu3+ ions in GaN. / Kachkanov, V.; Van Der Laan, G.; Dhesi, S.S.; Cavill, S.A.; Wallace, M.J.; O'Donnell, K.P.; Fujiwara, Y.

In: Scientific Reports, Vol. 2, 969, 01.01.2012.

Research output: Contribution to journalArticle

Harvard

Kachkanov, V, Van Der Laan, G, Dhesi, SS, Cavill, SA, Wallace, MJ, O'Donnell, KP & Fujiwara, Y 2012, 'Induced magnetic moment of Eu3+ ions in GaN', Scientific Reports, vol. 2, 969. https://doi.org/10.1038/srep00969

APA

Kachkanov, V., Van Der Laan, G., Dhesi, S. S., Cavill, S. A., Wallace, M. J., O'Donnell, K. P., & Fujiwara, Y. (2012). Induced magnetic moment of Eu3+ ions in GaN. Scientific Reports, 2, [969]. https://doi.org/10.1038/srep00969

Vancouver

Kachkanov V, Van Der Laan G, Dhesi SS, Cavill SA, Wallace MJ, O'Donnell KP et al. Induced magnetic moment of Eu3+ ions in GaN. Scientific Reports. 2012 Jan 1;2. 969. https://doi.org/10.1038/srep00969

Author

Kachkanov, V. ; Van Der Laan, G. ; Dhesi, S.S. ; Cavill, S.A. ; Wallace, M.J. ; O'Donnell, K.P. ; Fujiwara, Y. / Induced magnetic moment of Eu3+ ions in GaN. In: Scientific Reports. 2012 ; Vol. 2.

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@article{837e8b20ee49495c97ff7bcf73d9a1ed,
title = "Induced magnetic moment of Eu3+ ions in GaN",
abstract = "Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu ions in GaN which is associated with the F final state of D → F optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.",
author = "V. Kachkanov and {Van Der Laan}, G. and S.S. Dhesi and S.A. Cavill and M.J. Wallace and K.P. O'Donnell and Y. Fujiwara",
year = "2012",
month = "1",
day = "1",
doi = "10.1038/srep00969",
language = "English",
volume = "2",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Springer Nature",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Induced magnetic moment of Eu3+ ions in GaN

AU - Kachkanov, V.

AU - Van Der Laan, G.

AU - Dhesi, S.S.

AU - Cavill, S.A.

AU - Wallace, M.J.

AU - O'Donnell, K.P.

AU - Fujiwara, Y.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu ions in GaN which is associated with the F final state of D → F optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.

AB - Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu ions in GaN which is associated with the F final state of D → F optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.

UR - http://www.scopus.com/inward/record.url?scp=84871791755&partnerID=8YFLogxK

U2 - 10.1038/srep00969

DO - 10.1038/srep00969

M3 - Article

VL - 2

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 969

ER -