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In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film

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In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film. / Ogasawara, Takahiro; Jackson, Edward Alan; Tsunoda, Masakiyo; Ando, Yasuo; Hirohata, Atsufumi.

In: Journal of Magnetism and Magnetic Materials, Vol. 484, No. 307, 15.08.2019, p. 307-312.

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Harvard

Ogasawara, T, Jackson, EA, Tsunoda, M, Ando, Y & Hirohata, A 2019, 'In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film', Journal of Magnetism and Magnetic Materials, vol. 484, no. 307, pp. 307-312. https://doi.org/10.1016/j.jmmm.2019.04.024

APA

Ogasawara, T., Jackson, E. A., Tsunoda, M., Ando, Y., & Hirohata, A. (2019). In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film. Journal of Magnetism and Magnetic Materials, 484(307), 307-312. https://doi.org/10.1016/j.jmmm.2019.04.024

Vancouver

Ogasawara T, Jackson EA, Tsunoda M, Ando Y, Hirohata A. In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film. Journal of Magnetism and Magnetic Materials. 2019 Aug 15;484(307):307-312. https://doi.org/10.1016/j.jmmm.2019.04.024

Author

Ogasawara, Takahiro ; Jackson, Edward Alan ; Tsunoda, Masakiyo ; Ando, Yasuo ; Hirohata, Atsufumi. / In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film. In: Journal of Magnetism and Magnetic Materials. 2019 ; Vol. 484, No. 307. pp. 307-312.

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@article{ca766fcfba6a4437a33051b192983ce4,
title = "In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film",
abstract = "Fe-doped D019 Mn3Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, Hex, induced in the attached ferromagnetic layer. The (Mn,Fe)3Ga films were deposited on a Si substrate with a Ru buffer layer with a (0001)-oriented single D019 phase at room temperature. Consequently, in-plane and perpendicular Hex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane Hex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn1.99Fe0.41Ga. Perpendicular Hex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe)3Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn1.96Fe0.67Ga . The median blocking temperature of both in-plane and perpendicular Hex systems for 10-nm-thick (Mn,Fe)3Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular Hex induced by (Mn,Fe)3Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].",
author = "Takahiro Ogasawara and Jackson, {Edward Alan} and Masakiyo Tsunoda and Yasuo Ando and Atsufumi Hirohata",
note = "{\textcopyright} 2019 The Authors.",
year = "2019",
month = aug,
day = "15",
doi = "10.1016/j.jmmm.2019.04.024",
language = "English",
volume = "484",
pages = "307--312",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "307",

}

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TY - JOUR

T1 - In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film

AU - Ogasawara, Takahiro

AU - Jackson, Edward Alan

AU - Tsunoda, Masakiyo

AU - Ando, Yasuo

AU - Hirohata, Atsufumi

N1 - © 2019 The Authors.

PY - 2019/8/15

Y1 - 2019/8/15

N2 - Fe-doped D019 Mn3Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, Hex, induced in the attached ferromagnetic layer. The (Mn,Fe)3Ga films were deposited on a Si substrate with a Ru buffer layer with a (0001)-oriented single D019 phase at room temperature. Consequently, in-plane and perpendicular Hex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane Hex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn1.99Fe0.41Ga. Perpendicular Hex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe)3Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn1.96Fe0.67Ga . The median blocking temperature of both in-plane and perpendicular Hex systems for 10-nm-thick (Mn,Fe)3Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular Hex induced by (Mn,Fe)3Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].

AB - Fe-doped D019 Mn3Ga films were studied in terms of both their in-plane and perpendicular exchange bias field, Hex, induced in the attached ferromagnetic layer. The (Mn,Fe)3Ga films were deposited on a Si substrate with a Ru buffer layer with a (0001)-oriented single D019 phase at room temperature. Consequently, in-plane and perpendicular Hex were measured in bilayers with a CoFe layer and a [Co/Pt] multilayer, respectively. In-plane Hex was found to be dependent on the Fe compositions, showing the largest value of 446 Oe at 120 K for 10-nm-thick Mn1.99Fe0.41Ga. Perpendicular Hex was dependent on not only the Fe compositions but also the thickness of (Mn,Fe)3Ga, exhibiting the maximum of 163 Oe at 120 K for 5-nm-thick Mn1.96Fe0.67Ga . The median blocking temperature of both in-plane and perpendicular Hex systems for 10-nm-thick (Mn,Fe)3Ga were measured to be 235 and 240 K, respectively. The measured in-plane and perpendicular Hex induced by (Mn,Fe)3Ga are generated by a spin structural change from noncollinear to noncoplaner in ab-plane as expected from the previous theoretical study [A. Kundu and S. Ghosh, Intermetallics 93, 209 (2018)].

U2 - 10.1016/j.jmmm.2019.04.024

DO - 10.1016/j.jmmm.2019.04.024

M3 - Article

VL - 484

SP - 307

EP - 312

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 307

ER -